1N5399G datasheet, PDF - EEWORLD Datasheet

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1N5399G: DescriptionRECTIFIER DIODE, DO-15; CategoryDiscrete semiconductor diode; File Size70KB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/

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1N5399G Overview

RECTIFIER DIODE, DO-15

1N5399G Parametric

Parameter Name	Attribute value
Maker	Gulf Semiconductor
package instruction	O-PALF-W2
Reach Compliance Code	unknown
Is Samacsys	N
Other features	LOW LEAKAGE CURRENT
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.4 V
JEDEC-95 code	DO-204AC
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	50 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-50 °C
Maximum output current	1.5 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse current	10 µA
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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1N5391G THRU 1N5399G

GENERAL PURPOSE

GLASS PASSIVATED JUNCTION RECTIFIER

VOLTAGE:50 TO 1000V

CURRENT: 1.5A

FEATURE

Molded case feature for auto insertion

Glass Passivated junction

High current capability

Low leakage current

High surge capability

High temperature soldering guaranteed

250°C/10sec/0.375”lead length at 5 lbs tension

DO-15\DO-204AC

MECHANICAL DATA

Terminal:Plated axial leads solderable per

MIL-STD 202E, method 208C

Case:Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity:color band denotes cathode

Mounting position:any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,

for capacitive load, derate current by 20%)

SYMBOL

*

1N53

91G

50

35

50

1N53

92G

100

70

100

1N53

93G

200

140

200

1N53

94G

300

210

300

1N53

95G

400

280

400

1.5

50.0

1.4

10.0

200.0

15.0

50.0

-50 to +150

1N53

96G

500

350

500

1N53

97G

600

420

600

1N53

98G

800

560

800

1N53

99G

1000

700

1000

units

V

A

V

µA

pF

°C/W

°C

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified

Current 3/8”lead length at Ta =25°C

Peak Forward Surge Current 8.3ms single

Half sine-wave superimposed on rated load

Maximum Instantaneous Forward Voltage

at 1.5A

Maximum DC Reverse Current

Ta =25°C

at rated DC blocking voltage

Ta =125°C

Typical Junction Capacitance

(Note 1)

Typical Thermal Resistance

(Note 2)

Storage and Operation Junction Temperature

Vrrm

Vrms

Vdc

If(av)

Ifsm

Vf

Ir

Cj

R(ja)

Tstg

*

Note:

1. Measured at 1.0 MHz and applied voltage of 4.0Vdc

2. Thermal Resistance from Junction to Ambient at 0.375”lead length, P.C. Board Mounted

* JEDEC Registered value

Rev.A1

www.gulfsemi.com

1N5399G Related Products

	1N5399G	1N5391G	1N5394G	1N5393G	1N5392G	1N5395G	1N5397G	1N5398G
Description	RECTIFIER DIODE, DO-15	RECTIFIER DIODE, DO-15	RECTIFIER DIODE, DO-15	1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-15	1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-15	1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15	1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15	RECTIFIER DIODE, DO-15
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknow	unknown	unknown	unknown	unknown
Other features	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.4 V	1.4 V	1.4 V	1.4 V	1.4 V	1.4 V	1.4 V	1.4 V
JEDEC-95 code	DO-204AC	DO-204AC	DO-204AC	DO-204AC	DO-204AC	DO-204AC	DO-204AC	DO-204AC
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	50 A	50 A	50 A	50 A	50 A	50 A	50 A	50 A
Number of components	1	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C
Maximum output current	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	1000 V	50 V	300 V	200 V	100 V	400 V	600 V	800 V
Maximum reverse current	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Base Number Matches	1	1	1	1	1	1	1	1
Is Samacsys	N	N	N	-	N	N	N	N

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