IDT6116SA25SOI8 datasheet, PDF

IDT6116SA25SOI8: DescriptionStandard SRAM, 2KX8, 25ns, CMOS, PDSO24, 0.300 INCH, SOIC-24; Categorystorage storage; File Size113KB，11 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT6116SA25SOI8 Overview

Standard SRAM, 2KX8, 25ns, CMOS, PDSO24, 0.300 INCH, SOIC-24

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	SOIC
package instruction	0.300 INCH, SOIC-24
Contacts	24
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum access time	25 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G24
JESD-609 code	e0
length	15.4 mm
memory density	16384 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	1
Number of functions	1
Number of terminals	24
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP24,.4
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Maximum seat height	2.65 mm
Maximum standby current	0.002 A
Minimum standby current	4.5 V
Maximum slew rate	0.12 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	7.5 mm

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