FCX634 datasheet, PDF - EEWORLD Datasheet

FCX634: DescriptionSmall Signal Bipolar Transistor, 0.9A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size22KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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FCX634 Overview

Small Signal Bipolar Transistor, 0.9A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN

Parameter Name	Attribute value
Maker	Diodes
Parts packaging code	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.9 A
Collector-emitter maximum voltage	100 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	15000
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Nominal transition frequency (fT)	140 MHz

	FCX634
Description	Small Signal Bipolar Transistor, 0.9A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN
Maker	Diodes
Parts packaging code	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.9 A
Collector-emitter maximum voltage	100 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	15000
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Nominal transition frequency (fT)	140 MHz

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