MMBF170TR datasheet, PDF - EEWORLD Datasheet

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MMBF170TR: DescriptionSmall Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size1MB，14 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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MMBF170TR Overview

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN

MMBF170TR Parametric

Parameter Name	Attribute value
Maker	Fairchild
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.5 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	10 pF
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor

March 2010

BS170 / MMBF170

N-Channel Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. These products have been

designed to minimize on-state resistance while provide

rugged, reliable, and fast switching performance. They can

be used in most applications requiring up to 500mA DC.

These products are particularly suited for low voltage, low

current applications such as small servo motor control,

power MOSFET gate drivers, and other switching

applications.

Features

■

High density cell design for low R

DS(ON)

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

■

BS170

MMBF170

TO-92

SOT-23

Absolute Maximum Ratings

Symbol

DSS

DGR

GSS

, T

STG

Drain-Source Voltage

= 25°C unless otherwise noted

Parameter

Drain-Gate Voltage (R

≤

1MΩ)

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

BS170

± 20

500

1200

MMBF170

Units

500

800

- 55 to 150

300

°C

Thermal Characteristics

Symbol

θJA

= 25°C unless otherwise noted

Parameter

Maximum Power Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

BS170

830

6.6

150

MMBF170

300

2.4

417

Units

mW/°C

°C/W

BS170 / MMBF170 Rev. E2

www.fairchildsemi.com

MMBF170TR Related Products

	MMBF170TR	BS170_J35Z	BS170D26Z	BS170D27Z	BS170D74Z	BS170D75Z
Description	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN	mosfet N-CH 60v 500ma TO-92	500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN	500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN	500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN	500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN
Maker	Fairchild	-	Fairchild	Fairchild	Fairchild	Fairchild
package instruction	SMALL OUTLINE, R-PDSO-G3	-	TO-92, 3 PIN	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	TO-92, 3 PIN
Reach Compliance Code	unknown	-	unknown	compliant	compliant	unknown
Is it lead-free?	-	-	Lead free	Lead free	Lead free	Lead free
Parts packaging code	-	-	TO-92	TO-92	TO-92	TO-92
Contacts	-	-	3	3	3	3

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