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GVT72512A8J-12

Description
Standard SRAM, 512KX8, 12ns, CMOS, PDSO36
Categorystorage    storage   
File Size64KB,9 Pages
ManufacturerCypress Semiconductor
Download Datasheet Parametric View All

GVT72512A8J-12 Overview

Standard SRAM, 512KX8, 12ns, CMOS, PDSO36

GVT72512A8J-12 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCypress Semiconductor
package instructionSOJ-36
Reach Compliance Codecompliant
Maximum access time12 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-J36
JESD-609 codee0
length23.67 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals36
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ36,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height3.76 mm
Maximum standby current0.01 A
Minimum standby current4.5 V
Maximum slew rate0.21 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm

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