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MJE13006

Description
MJE13006
CategoryDiscrete semiconductor    The transistor   
File Size334KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

MJE13006 Overview

MJE13006

MJE13006 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Reach Compliance Codenot_compliant
Maximum collector current (IC)8 A
ConfigurationSingle
Minimum DC current gain (hFE)5
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)80 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)4 MHz
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