MAS9264T95FD datasheet, PDF - EEWORLD Datasheet

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MAS9264T95FD: DescriptionSRAM; Categorystorage storage; File Size238KB，15 Pages; ManufacturerDynex; Websitehttp://www.dynexsemi.com/

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MAS9264T95FD Overview

SRAM

MAS9264T95FD Parametric

Parameter Name	Attribute value
Maker	Dynex
package instruction	,
Reach Compliance Code	unknown

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MA9264

Radiation Hard 8192x8 Bit Static RAM

Replaces June 1999 version, DS3692-6.0

DS3692-7.0 January 2000

The MA9264 64k Static RAM is configured as 8192x8 bits and

manufactured using CMOS-SOS high performance, radiation hard,

1.5µm technology.

The design uses a 6 transistor cell and has full static operation with

no clock or timing strobe required. Address input buffers are deselected

when chip select is in the HIGH state.

See Application Note “Overview of the Dynex Semiconductor

Radiation Hard 1.5µm CMOS/SOS SRAM Range”.

Operation Mode

Read

Write

Output Disable

Standby

OE WE

I/O

D OUT

D IN

High Z

ISB2

ISB1

Power

FEATURES

1.5µm CMOS-SOS Technology

Latch-up Free

Fast Access Time 70ns Typical

Total Dose 10

Rad(Si)

Transient Upset >10

Rad(Si)/sec

SEU 4.3 x 10

-11

Errors/bitday

Single 5V Supply

Three State Output

Low Standby Current 100µA Typical

-55°C to +125°C Operation

All Inputs and Outputs Fully TTL or CMOS

Compatible

Fully Static Operation

Figure 1: Truth Table

A12

A10

A11

Figure 2: Block Diagram

1/15

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