MSM54V12222B-25JS datasheet, PDF

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MSM54V12222B-25JS: DescriptionMemory Circuit, 256KX12, CMOS, PDSO40, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-40; Categorystorage storage; File Size164KB，18 Pages; ManufacturerLAPIS Semiconductor Co., Ltd.

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MSM54V12222B-25JS Overview

Memory Circuit, 256KX12, CMOS, PDSO40, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-40

MSM54V12222B-25JS Parametric

Parameter Name	Attribute value
Maker	LAPIS Semiconductor Co., Ltd.
Parts packaging code	SOJ
package instruction	SOJ, SOJ40,.44
Contacts	40
Reach Compliance Code	unknown
Maximum access time	23 ns
JESD-30 code	R-PDSO-J40
JESD-609 code	e0
length	26.03 mm
memory density	3145728 bit
Memory IC Type	MEMORY CIRCUIT
memory width	12
Number of functions	1
Number of terminals	40
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX12
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ40,.44
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	3.75 mm
Maximum standby current	0.003 A
Maximum slew rate	0.06 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN LEAD
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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Dear customers,

About the change in the name such as "Oki Electric Industry Co. Ltd." and

"OKI" in documents to OKI Semiconductor Co., Ltd.

The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI

Semiconductor Co., Ltd. on October 1, 2008.

Therefore, please accept that although

the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"

remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".

It is a change of the company name, the company trademark, and the logo, etc. , and

NOT a content change in documents.

October 1, 2008

OKI Semiconductor Co., Ltd.

550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan

http://www.okisemi.com/en/

OKI Semiconductor

MSM54V12222B

262,214-Word

12-Bit Field Memory

FEDS54V12222B-01

Issue Date: Nov.,20, 2002

GENERAL DESCRIPTION

The OKI MSM54V12222B is a high performance 3-Mbit, 256K

12-bit, Field Memory. It is especially designed

for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and

Multi-media systems. MSM54V12222B is a FRAM for wide or low end use in general commodity TVs and VTRs

exclusively. MSM54V12222B is not designed for the other use or high end use in medical systems, professional

graphics systems which require long term picture storage, data storage systems and others. More than two

MSM54V12222Bs can be cascaded directly without any delay devices among the MSM54V12222Bs. (Cascading

of MSM54V12222B provides larger storage depth or a longer delay).

Each of the 12-bit planes has separate serial write and read ports. These employ independent control clocks to

support asynchronous read and write operations. Different clock rates are also supported that allow alternate data

rates between write and read data streams.

The MSM54V12222B provides high speed FIFO, First-In First-Out, operation without external refreshing:

MSM54V12222B refreshes its DRAM storage cells automatically, so that it appears fully static to the users.

Moreover, fully static type memory cells and decoders for serial access enable the refresh free serial access

operation, so that serial read and/or write control clock can be halted high or low for any duration as long as the

power is on. Internal conflicts of memory access and refreshing operations are prevented by special arbitration

logic.

The MSM54V12222B’s function is simple, and similar to a digital delay device whose delay-bit-length is easily

set by reset timing. The delay length, number of read delay clocks between write and read, is determined by

externally controlled write and read reset timings.

Additional SRAM serial registers, or line buffers for the initial access of 256

12-bit enable high speed

first-bit-access with no clock delay just after the write or read reset timings.

Additionally, the MSM54V12222B has write mask function or input enable function (IE), and read-data skipping

function or output enable function (OE) . The differences between write enable (WE) and input enable (IE), and

between read enable (RE) and output enable (OE) are that WE and RE can stop serial write/read address

increments, but IE and OE cannot stop the increment, when write/read clocking is continuously applied to

MSM54V12222B. The input enable (IE) function allows the user to write into selected locations of the memory

only, leaving the rest of the memory contents unchanged. This facilitates data processing to display a “picture in

picture” on a TV screen.

The MSM54V12222B is similar in operation and functionality to OKI 1-Mbit Field Memory MSM51V4222C and

2-Mbit Field Memory MSM51V8222A. Three MSM51V4222Cs or one MSM51V4222C plus one

MSM51V8222A can be replaced simply by one MSM54V12222B.

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MSM54V12222B-25JS Related Products

	MSM54V12222B-25JS	MSM54V12222B-20TS-K	MSM54V12222B-25TS-K	MSM54V12222B-20JS
Description	Memory Circuit, 256KX12, CMOS, PDSO40, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-40	Memory Circuit, 256KX12, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44	Memory Circuit, 256KX12, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44	Memory Circuit, 256KX12, CMOS, PDSO40, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-40
Parts packaging code	SOJ	TSOP2	TSOP2	SOJ
package instruction	SOJ, SOJ40,.44	TSOP2, TSOP44,.46,32	TSOP2, TSOP44,.46,32	SOJ, SOJ40,.44
Contacts	40	44	44	40
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum access time	23 ns	18 ns	23 ns	18 ns
JESD-30 code	R-PDSO-J40	R-PDSO-G44	R-PDSO-G44	R-PDSO-J40
length	26.03 mm	18.41 mm	18.41 mm	26.03 mm
memory density	3145728 bit	3145728 bit	3145728 bit	3145728 bit
Memory IC Type	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
memory width	12	12	12	12
Number of functions	1	1	1	1
Number of terminals	40	44	44	40
word count	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	256KX12	256KX12	256KX12	256KX12
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOJ	TSOP2	TSOP2	SOJ
Encapsulate equivalent code	SOJ40,.44	TSOP44,.46,32	TSOP44,.46,32	SOJ40,.44
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE
power supply	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	3.75 mm	1.2 mm	1.2 mm	3.75 mm
Maximum standby current	0.003 A	0.003 A	0.003 A	0.003 A
Maximum slew rate	0.06 mA	0.06 mA	0.06 mA	0.06 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	J BEND	GULL WING	GULL WING	J BEND
Terminal pitch	1.27 mm	0.8 mm	0.8 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm
Maker	LAPIS Semiconductor Co., Ltd.	-	LAPIS Semiconductor Co., Ltd.	LAPIS Semiconductor Co., Ltd.

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