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M58CR064Q10ZB6T

Description
Flash, 4MX16, 100ns, PBGA56, 6.50 X 10 MM, 0.75 MM PITCH, TFBGA-56
Categorystorage    storage   
File Size1000KB,70 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M58CR064Q10ZB6T Overview

Flash, 4MX16, 100ns, PBGA56, 6.50 X 10 MM, 0.75 MM PITCH, TFBGA-56

M58CR064Q10ZB6T Parametric

Parameter NameAttribute value
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instruction6.50 X 10 MM, 0.75 MM PITCH, TFBGA-56
Contacts56
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time100 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup blockBOTTOM
JESD-30 codeR-PBGA-B56
length10 mm
memory density67108864 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals56
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
typeNOR TYPE
width6.5 mm
M58CR064C, M58CR064D
M58CR064P, M58CR064Q
64 Mbit (4Mb x 16, Dual Bank, Burst )
1.8V Supply Flash Memory
FEATURES SUMMARY
s
SUPPLY VOLTAGE
– V
DD
= 1.65V to 2V for Program, Erase and
Read
– V
DDQ
= 1.65V to 3.3V for I/O Buffers
– V
PP
= 12V for fast Program (optional)
s
Figure 1. Package
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode : 54MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 85, 90, 100, 120ns
FBGA
s
PROGRAMMING TIME
– 10µs by Word typical
– Double/Quadruple Word Program option
TFBGA56 (ZB)
6.5 x 10mm
s
MEMORY BLOCKS
– Dual Bank Memory Array: 16/48 Mbit
– Parameter Blocks (Top or Bottom location)
s
DUAL OPERATIONS
– Program Erase in one Bank while Read in
other
– No delay between Read and Write operations
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58CR064C: 88CAh
– Bottom Device Code, M58CR064D: 88CBh
– Top Device Code, M58CR064P: 8801h
– Bottom Device Code, M58CR064Q: 8802h
s
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
s
SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
– One parameter block permanently lockable
s
s
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
June 2003
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