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MJE15029

Description
Power Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size236KB,2 Pages
ManufacturerSPC Multicomp
Download Datasheet Parametric View All

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MJE15029 Overview

Power Bipolar Transistor,

MJE15029 Parametric

Parameter NameAttribute value
MakerSPC Multicomp
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
Maximum landing time (tf)500 ns
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)50 W
Maximum rise time (tr)600 ns
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)12 MHz
Maximum off time (toff)1700 ns
VCEsat-Max1 V
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