J202D26Z datasheet, PDF - EEWORLD Datasheet

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J202D26Z: DescriptionSmall Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92; CategoryDiscrete semiconductor The transistor; File Size852KB，13 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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J202D26Z Overview

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92

J202D26Z Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant
Configuration	SINGLE
FET technology	JUNCTION
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.31 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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J201 / J202 / MMBFJ201 / MMBFJ202

J201

J202

MMBFJ201

MMBFJ202

TO-92

SOT-23

Mark: 62P / 62Q

NOTE: Source & Drain

are interchangeable

N-Channel General Purpose Amplifier

This device is designed primarily for low level audio and general

purpose applications with high impedance signal sources. Sourced

from Process 52.

Absolute Maximum Ratings*

Symbol

stg

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

TA = 25°C unless otherwise noted

Parameter

Value

- 40

-55 to +150

Units

°C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

These ratings are based on a maximum junction temperature of 150 degrees C.

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics

Symbol

θJC

θJA

TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

J202-203

625

5.0

125

357

Max

*MMBFJ202-203

350

2.8

556

Units

mW/°C

°C/W

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997

Fairchild Semiconductor Corporation

J202D26Z Related Products

	J202D26Z	J202D74Z	J201D27Z	J201D74Z
Description	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	Fairchild	Fairchild	Fairchild	Fairchild
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant	compliant	compliant	compliant
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e3	e3	e3	e3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.31 W	0.31 W	0.31 W	0.31 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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