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M58WR032EB100ZB6

Description
2MX16 FLASH 1.8V PROM, 100ns, PBGA56, 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56
Categorystorage    storage   
File Size1MB,81 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M58WR032EB100ZB6 Overview

2MX16 FLASH 1.8V PROM, 100ns, PBGA56, 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56

M58WR032EB100ZB6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeBGA
package instruction7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56
Contacts56
Reach Compliance Codenot_compliant
ECCN code3A991.B.1.A
Maximum access time100 ns
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B56
JESD-609 codee0
length9 mm
memory density33554432 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,63
Number of terminals56
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA56,7X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
page size4 words
Parallel/SerialPARALLEL
power supply1.8/2,1.8/3 V
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1 mm
Department size4K,32K
Maximum standby current0.000005 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)2.2 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn63Pb37)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
switch bitNO
typeNOR TYPE
width7.7 mm
M58WR032ET
M58WR032EB
32 Mbit (2Mb x 16, Multiple Bank, Burst)
1.8V Supply Flash Memory
FEATURES SUMMARY
SUPPLY VOLTAGE
– V
DD
= 1.65V to 2.2V for Program, Erase
and Read
– V
DDQ
= 1.65V to 3.3V for I/O Buffers
– V
PP
= 12V for fast Program (optional)
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 54MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 70, 80, 100ns
PROGRAMMING TIME
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit
Banks
– Parameter Blocks (Top or Bottom
location)
DUAL OPERATIONS
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
– One parameter block permanently
lockable
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Package
FBGA
VFBGA56 (ZB)
7.7 x 9 mm
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58WR032ET: 8814h
– Bottom Device Code, M58WR032EB:
8815h
April 2004
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