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BYV118F-35

Description
10A, 35V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size38KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BYV118F-35 Overview

10A, 35V, SILICON, RECTIFIER DIODE

BYV118F-35 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instructionR-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresWITHSTAND REVERSE VOLTAGE TRANSIENTS, SURGE CAPABILITY
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.87 V
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current110 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage35 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Isolated package
BYV118F, BYV118X series
SYMBOL
QUICK REFERENCE DATA
V
R
= 35 V/ 40 V/ 45 V
I
O(AV)
= 10 A
V
F
0.6 V
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The BYV118F series is supplied in the SOT186 package.
The BYV118X series is supplied in the SOT186A package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
isolated
SOT186
case
SOT186A
case
1 2 3
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
BYV118F-
BYV118X-
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
-
T
hs
97 ˚C
square wave;
δ
= 0.5;
T
hs
107 ˚C
square wave;
δ
= 0.5;
T
hs
107 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j max
-
-
-
-
-
-
-
- 65
MIN.
35
35
35
35
35
MAX.
40
40
40
40
40
10
10
100
110
1
150
175
45
45
45
45
45
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
I
RRM
T
j
T
stg
May 1998
1
Rev 1.100

BYV118F-35 Related Products

BYV118F-35 BYV118X-35 BYV118X-40 BYV118X-45 BYV118F-45 BYV118F-40
Description 10A, 35V, SILICON, RECTIFIER DIODE 10A, 35V, SILICON, RECTIFIER DIODE 10A, 40V, SILICON, RECTIFIER DIODE 10A, 45V, SILICON, RECTIFIER DIODE 10A, 45V, SILICON, RECTIFIER DIODE 10A, 40V, SILICON, RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Maker NXP NXP NXP NXP NXP NXP
package instruction R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features WITHSTAND REVERSE VOLTAGE TRANSIENTS, SURGE CAPABILITY SURGE CAPABILITY SURGE CAPABILITY SURGE CAPABILITY WITHSTAND REVERSE VOLTAGE TRANSIENTS, SURGE CAPABILITY WITHSTAND REVERSE VOLTAGE TRANSIENTS, SURGE CAPABILITY
application FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.87 V 0.87 V 0.87 V 0.87 V 0.87 V 0.87 V
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Maximum non-repetitive peak forward current 110 A 110 A 110 A 110 A 110 A 110 A
Number of components 2 2 2 2 2 2
Phase 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 10 A 10 A 10 A 10 A 10 A 10 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 35 V 35 V 40 V 45 V 45 V 40 V
surface mount NO NO NO NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE

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