2SJ332(S) datasheet, PDF - EEWORLD Datasheet

2SJ332(S): Description10A, 20V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3; CategoryDiscrete semiconductor The transistor; File Size56KB，9 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2SJ332(S) Overview

10A, 20V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3

Parameter Name	Attribute value
package instruction	DPAK-3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (Abs) (ID)	10 A
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	0.14 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	20 W
Maximum pulsed drain current (IDM)	40 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	2SJ332(S)	2SJ332(L)
Description	10A, 20V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3	10A, 20V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3
package instruction	DPAK-3	IN-LINE, R-PSIP-T3
Contacts	3	3
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V	20 V
Maximum drain current (Abs) (ID)	10 A	10 A
Maximum drain current (ID)	10 A	10 A
Maximum drain-source on-resistance	0.14 Ω	0.14 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G3	R-PSIP-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	20 W	20 W
Maximum pulsed drain current (IDM)	40 A	40 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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