FSB660/FSB660A
FSB660 / FSB660A
C
E
B
SuperSOT
TM
-3 (SOT-23)
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
stg
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A = 25°C unless otherwise noted
FSB660/FSB660A
60
60
5
2
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
T
A = 25°C unless otherwise noted
Max
Characteristic
FSB660/FSB660A
P
D
R
θJA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
500
250
mW
°C/W
Units
©
2001 Fairchild Semiconductor Corporation
FSB660/FSB660A Rev. B1
FSB660/FSB660A
PNP Low Saturation Transistor
(continued)
Electrical Characteristics
Symbol
T
A = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
EBO
I
CBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
C
= 10 mA
I
C
= 100
µA
I
E
= 100
µA
V
CB
= 30 V
V
CB
= 30 V, T
A
=100°C
I
EBO
Emitter Cutoff Current
V
EB
= 4V
60
60
5
100
10
100
V
V
V
nA
uA
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 100 mA, V
CE
= 2 V
I
C
=500mA, V
CE
=2V
FSB660
FSB660A
I
C
= 1 A, V
CE
= 2 V
I
C
= 2 A, V
CE
= 2 V
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 1 A, I
B
= 100 mA
I
C
= 2 A, I
B
=200 mA
FSB660
FSB660A
V
BE(sat)
V
BE(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 1 A, I
B
= 100 mA
I
C
= 1 A, V
CE
= 2 V
70
100
250
80
40
300
350
300
1.25
1
V
V
mV
300
550
-
SMALL SIGNAL CHARACTERISTICS
C
obo
f
T
Output Capacitance
Transition Frequency
V
CB
= 10 V, I
E
= 0, f = 1MHz
I
C
= 100 mA,V
CE
= 5 V, f=100MHz
75
30
pF
-
*Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FSB660/FSB660A Rev. B1
Typical Characteristics
V
-BASE-EMITTER SATURATION VOLTAGE(V)
BESAT
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1.4
β = 10
Base-Emitter On Voltage vs.
Collector Current
1.6
1.4
1.2
1
- 40°C
V
ce
= 2.0V
1.2
1
- 40°C
0.8
0.6
0.4
0.2
0.001
25°C
125°C
0.8
0.6
0.4
125°C
25°C
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
0.2
0.0001
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
Collector-Emitter Saturation
Voltage vs Collector Current
0.8
0.7
0.6
0.5
25°C
Input/Output Capacitance vs.
Reverse Bias Voltage
400
350
CAPACITANCE (pf)
C
obo
f V
ce
= 2.0V
= 1.0MHz
β = 10
125°C
300
250
200
150
100
50
C
ibo
0.4
0.3
- 40°C
0.2
0.1
0
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
0
0.1
0.5 1
10 20
V
CE
- COLLECTOR VOLTAGE (V)
50
100
Current Gain vs. Collector Current
1000
900
H
FE
- CURRENT GAIN
800
700
600
500
400
300
200
100
0
0.0001
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
- 40°C
25°C
125°C
V
ce
= 2.0V
FSB660/FSB660A Rev. B1
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not intended to be an exhaustive list of all such trademarks.
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E
2
CMOS
TM
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FACT™
FACT Quiet Series™
DISCLAIMER
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As used herein:
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1. Life support devices or systems are devices or
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systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
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support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H3
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