Power Field-Effect Transistor, 0.8ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3
Parameter Name | Attribute value |
Parts packaging code | TO-252 |
package instruction | SMALL OUTLINE, R-PSSO-G2 |
Contacts | 3 |
Reach Compliance Code | unknow |
Configuration | Single |
Maximum drain current (Abs) (ID) | 7 A |
Maximum drain-source on-resistance | 0.8 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSSO-G2 |
Number of terminals | 2 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 50 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | SINGLE |
Base Number Matches | 1 |
2SK1869(S) | 2SK1869(L) | |
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Description | Power Field-Effect Transistor, 0.8ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3 | Power Field-Effect Transistor, 0.8ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3 |
Parts packaging code | TO-252 | TO-252 |
package instruction | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 |
Contacts | 3 | 3 |
Reach Compliance Code | unknow | unknow |
Configuration | Single | Single |
Maximum drain current (Abs) (ID) | 7 A | 7 A |
Maximum drain-source on-resistance | 0.8 Ω | 0.8 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSSO-G2 | R-PSIP-T3 |
Number of terminals | 2 | 3 |
Maximum operating temperature | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | IN-LINE |
Polarity/channel type | N-CHANNEL | N-CHANNEL |
Maximum power dissipation(Abs) | 50 W | 50 W |
Certification status | Not Qualified | Not Qualified |
surface mount | YES | NO |
Terminal form | GULL WING | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE |
Base Number Matches | 1 | 1 |