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2SK1869(S)

Description
Power Field-Effect Transistor, 0.8ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size27KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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2SK1869(S) Overview

Power Field-Effect Transistor, 0.8ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3

2SK1869(S) Parametric

Parameter NameAttribute value
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)7 A
Maximum drain-source on-resistance0.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Base Number Matches1

2SK1869(S) Related Products

2SK1869(S) 2SK1869(L)
Description Power Field-Effect Transistor, 0.8ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3 Power Field-Effect Transistor, 0.8ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3
Parts packaging code TO-252 TO-252
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknow unknow
Configuration Single Single
Maximum drain current (Abs) (ID) 7 A 7 A
Maximum drain-source on-resistance 0.8 Ω 0.8 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSIP-T3
Number of terminals 2 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 50 W 50 W
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Base Number Matches 1 1

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