2SD2158O datasheet, PDF - EEWORLD Datasheet

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2SD2158O: DescriptionPower Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3; CategoryDiscrete semiconductor The transistor; File Size103KB，3 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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2SD2158O Overview

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3

2SD2158O Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	1200
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	2 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	40 MHz
Base Number Matches	1

2SD2158O Related Products

	2SD2158O	2SD2158AP	2SD2158AQ	2SD2158Q	2SD2158P	2SD2158AO
Description	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	SFM	SFM	SFM	SFM	SFM	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	TO-220, FULL PACK-3	TO-220, FULL PACK-3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	2 A	2 A	2 A	2 A	2 A	2 A
Collector-emitter maximum voltage	60 V	80 V	80 V	60 V	60 V	80 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	1200	800	500	500	800	1200
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	2 W	2 W	2 W	2 W	2 W	2 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	40 MHz	40 MHz	40 MHz	40 MHz	40 MHz	40 MHz
Base Number Matches	1	1	1	1	1	1

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