Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Parameter Name | Attribute value |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Shell connection | ISOLATED |
Maximum collector current (IC) | 3 A |
Collector-emitter maximum voltage | 80 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 500 |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 3 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 50 MHz |
Base Number Matches | 1 |
2SD1643 | 2SD1643AQ | 2SD1643AO | 2SD1643O | 2SD1643AP | 2SD1643P | 2SD1643Q | |
---|---|---|---|---|---|---|---|
Description | Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | Transistor | Transistor | Transistor | Transistor | Transistor | Transistor |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
Maximum collector current (IC) | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A |
Configuration | SINGLE | Single | Single | Single | Single | Single | Single |
Minimum DC current gain (hFE) | 500 | 500 | 1200 | 1200 | 800 | 800 | 500 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
Maximum power dissipation(Abs) | 3 W | 3 W | 3 W | 3 W | 3 W | 3 W | 3 W |
surface mount | NO | NO | NO | NO | NO | NO | NO |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 |