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2SD1643

Description
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size104KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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2SD1643 Overview

Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

2SD1643 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)3 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)500
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)3 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1

2SD1643 Related Products

2SD1643 2SD1643AQ 2SD1643AO 2SD1643O 2SD1643AP 2SD1643P 2SD1643Q
Description Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin Transistor Transistor Transistor Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Maximum collector current (IC) 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Configuration SINGLE Single Single Single Single Single Single
Minimum DC current gain (hFE) 500 500 1200 1200 800 800 500
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 3 W 3 W 3 W 3 W 3 W 3 W 3 W
surface mount NO NO NO NO NO NO NO
Base Number Matches 1 1 1 1 1 1 1

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