Ordering number:ENN3097
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1710/2SC4490
High-Definition CRT Display
Video Output Applications
Features
· High breakdown voltage (V
CEO
≥300V).
· Excellent high frequency characteristic.
· Adoption of MBIT process.
Package Dimensions
unit:mm
2064A
[2SA1710/2SC4490]
2.5
1.45
6.9
1.0
4.5
1.0
0.6
1.0
0.9
1
2
3
0.5
0.45
( ) : 2SA1710
2.54
2.54
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
Ratings
(–)300
(–)300
(–)5
(–)100
(–)200
1
150
–55 to +150
4.0
1.0
Unit
V
V
V
mA
mA
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
VCB=(–)200V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)30V, IC=(–)10mA
70*
70
Conditions
Ratings
min
typ
max
(–)100
(–)100
280*
MHz
Unit
nA
nA
* : The 2SA1710/2SC4490 are classified by 100mA h
FE
as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40804TN (PC)/5169MO, TS No.3097–1/5
2SA1710/2SC4490
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
VCE(sat)
VBE(sat)
Cob
Cre
Conditions
IC=(–)20mA, IB=(–)2mA
IC=(–)20mA, IB=(–)2mA
VCB=(–)30V, f=1MHz
VCB=(–)30V, f=1MHz
(–)300
(–)300
(–)5
(3.1)
2.6
(2.3)
1.8
Ratings
min
typ
max
(–)0.6
(–)1.0
Unit
V
V
pF
pF
pF
pF
V
V
V
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
IE=(–)10µA, IC=0
--50
IC -- VCE
2SA1710
--350μA
--300
μA
50
IC -- VCE
2SC4490
μ
A
350
300
μ
A
250μA
200μA
150μA
Collector Current, IC – mA
--250μA
--30
Collector Current, IC – mA
--40
40
--200μA
30
--150μA
--20
20
--100μA
--10
100μA
10
--50μA
50μA
0
0
IB=0
--2
--4
--6
--8
--10
ITR04358
0
0
2
4
6
IB=0
8
10
ITR04359
Collector-to-Emitter Voltage, VCE – V
--10
IC -- VCE
Collector-to-Emitter Voltage, VCE – V
10
IC -- VCE
2SA1710
--60
μ
A
2SC4490
60
μA
8
Collector Current, IC – mA
--40μA
--6
Collector Current, IC – mA
--8
--50
μ
A
50
μA
40
μA
6
--30μA
--4
30μA
4
--20
μA
20μA
2
--2
--10μA
10μA
0
0
IB=0
--20
--40
--60
--80
--100
ITR04360
0
0
20
40
60
IB=0
80
100
ITR04361
Collector-to-Emitter Voltage, VCE – V
--120
Collector-to-Emitter Voltage, VCE – V
120
IC -- VBE
2SA1710
VCE=--5V
IC -- VBE
2SC4490
VCE=5V
--100
100
Collector Current, IC – mA
--80
Collector Current, IC – mA
80
--60
60
Ta=75
°
C
25
°
C
--25
°
C
Ta=75
°
C
--20
20
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
ITR04362
0
0
0.2
0.4
0.6
25
°
C
--40
40
--25
°
C
0.8
1.0
ITR04363
Base-to-Emitter Voltage, VBE – V
Base-to-Emitter Voltage, VBE – V
No.3097–2/5
2SA1710/2SC4490
1000
7
5
hFE -- IC
2SA1710
VCE=--10V
1000
7
5
hFE -- IC
2SC4490
VCE=10V
DC Current Gain, hFE
DC Current Gain, hFE
3
2
3
2
Ta=75°C
25°C
--25°C
Ta=75°C
25°C
100
7
5
3
2
10
--1.0
100
7
5
3
2
10
1.0
--25°C
2
3
5
7 --10
2
3
5
Collector Current, IC – mA
2
7 --100
2
ITR04364
2
3
5
7 10
2
3
5
f T -- IC
Collector Current, IC – mA
2
7 100
2
ITR04365
f T -- IC
Gain-Bandwidth Product, fT – MHz
Gain-Bandwidth Product, fT – MHz
2SA1710
VCE=--30V
100
7
5
2SC4490
VCE=30V
100
7
5
3
2
3
2
10
7
5
5
7 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
ITR04366
10
7
5
5
7 1.0
2
3
5
7
10
2
3
5
7 100
2
ITR04367
Collector Current, IC – mA
2
Collector Current, IC – mA
2
Cob -- VCB
2SA1710
f=1MHz
Cob -- VCB
2SC4490
f=1MHz
Output Capacitance, Cob -- pF
10
7
5
Output Capacitance, Cob -- pF
2
3
5
7 --10
2
3
5
7 --100
2
V
ITR04368
10
7
5
3
2
3
2
1.0
7
5
--1.0
1.0
7
5
1.0
2
3
5
7
10
2
3
5
7 100
2
V
ITR04369
Collector-to-Base Voltage, VCB --
2
Collector-to-Base Voltage, VCB --
2
Cre -- VCB
Reverse Transfer Capacitance, Cre -- pF
2SA1710
f=1MHz
Cre -- VCB
2SC4490
f=1MHz
Reverse Transfer Capacitance, Cre -- pF
10
7
5
10
7
5
3
2
3
2
1.0
7
5
--1.0
2
3
5
7 --10
2
3
5
7 --100
2
V
ITR04370
1.0
7
5
1.0
2
3
5
7
10
2
3
5
7 100
2
ITR04371
Collector-to-Base Voltage, VCB --
Collector-to-Base Voltage, VCB -- V
No.3097–3/5
2SA1710/2SC4490
5
VCE(sat) -- IC
2SA1710
IC / IB=10
--1000
VCE(sat) -- IC
2SC4490
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
3
2
7
5
--1000
7
5
3
2
3
2
--100
7
5
3
--100
7
5
5
7 --1.0
2
3
5
7 --10
2
3
5
Collector Current, IC – mA
--1.0
7
7 --100
ITR04372
1.0
5
7 1.0
2
3
5
7 10
2
3
5
Collector Current, IC – mA
7 100
2
ITR04373
VBE(sat) -- IC
2SA1710
IC / IB=10
VBE(sat) -- IC
2SC4490
IC / IB=10
7
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
5
5
3
2
3
2
--0.1
7
5
0.1
7
5
3
2
5
7 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
3
2
5
7 1.0
2
3
5
7
10
2
3
5
7 100
2
Collector Current, IC – mA
3
2
ITR04374
1.2
ASO
Collector Current, IC – mA
ITR04375
PC -- Ta
ICP=200
IC=100
2SA1710 / 2SC4490
2SA1710 / 2SC4490
1.0
30
0
μ
7
5
3
2
10
7
5
3
2
5
Collector Dissipation, P
C
– W
Collector Current, IC – mA
100
1m
s
s
10
m
DC
0.8
s
op
era
tio
n
0.6
0.4
Ta=25°C
Single pulse
(For PNP, minus sign is omitted.)
7
10
2
3
5
7
100
2
3
5
0.2
0
0
20
40
60
80
100
120
140
160
ITR04376
Collector-to-Emitter Voltage, VCE – V
Ambient Temperature, Ta – ˚C
ITR04377
No.3097–4/5
2SA1710/2SC4490
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2004. Specifications and information herein are subject to
change without notice.
PS No.3097–5/5
RF/Wirelessly
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