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2SD1805G(TP)

Description
TRANSISTOR,BJT,NPN,20V V(BR)CEO,5A I(C),TO-251VAR
CategoryDiscrete semiconductor    The transistor   
File Size95KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2SD1805G(TP) Overview

TRANSISTOR,BJT,NPN,20V V(BR)CEO,5A I(C),TO-251VAR

2SD1805G(TP) Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)5 A
ConfigurationSingle
Minimum DC current gain (hFE)280
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)15 W
surface mountNO
Base Number Matches1
Ordering number:EN2115B
NPN Epitaxial Planar Silicon Transistor
2SD1805
High-Current Switching Applications
Applications
· Strobes, voltage regulators, relay drivers, lamp
drivers.
Package Dimensions
unit:mm
2045B
[2SD1805]
1.5
6.5
5.0
4
2.3
0.5
Features
· Low saturation voltage.
· Fast switching time.
· Large current capacity.
· Small and slim package making it easy to make
2SD1805-applied sets smaller.
0.85
0.7
5.5
7.0
0.8
1.6
1.2
0.6
0.5
1
2
3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
2.3
2.3
unit:mm
2044B
[2SD1805]
6.5
5.0
4
2.3
1.5
7.5
0.5
5.5
7.0
0.85
1
0.6
0.5
0.8
2
3
2.5
1.2
1.2
0~0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
2.3
2.3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22599TH (KT)/8309MO/5277KI/O236KI, TS No.2115–1/4

2SD1805G(TP) Related Products

2SD1805G(TP) 2SD1805F(TP-FA) 2SD1805E(TP-FA) 2SD1805E(TP)
Description TRANSISTOR,BJT,NPN,20V V(BR)CEO,5A I(C),TO-251VAR TRANSISTOR,BJT,NPN,20V V(BR)CEO,5A I(C),TO-252VAR TRANSISTOR,BJT,NPN,20V V(BR)CEO,5A I(C),TO-252VAR TRANSISTOR,BJT,NPN,20V V(BR)CEO,5A I(C),TO-251VAR
Reach Compliance Code compli compli compli compli
Maximum collector current (IC) 5 A 5 A 5 A 5 A
Configuration Single Single Single Single
Minimum DC current gain (hFE) 280 160 120 120
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 15 W 15 W 15 W 15 W
surface mount NO YES YES NO
Base Number Matches 1 1 1 1

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