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2SC4118YTE85R

Description
TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size58KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC4118YTE85R Overview

TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

2SC4118YTE85R Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
VCEsat-Max0.25 V
Base Number Matches1

2SC4118YTE85R Related Products

2SC4118YTE85R 2SC4118OTE85L 2SC4118OTE85R 2SC4118YTE85L 2SC4118TE85R 2SC4118TE85L
Description TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 30 V 30 V 30 V 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 25 25 40 25 25
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz
VCEsat-Max 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V
Base Number Matches 1 1 1 1 1 1

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