2SC3734B22-A datasheet, PDF - EEWORLD Datasheet

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2SC3734B22-A: DescriptionSi, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size234KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2SC3734B22-A Overview

Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3

2SC3734B22-A Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-based maximum capacity	4 pF
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
JESD-30 code	R-PDSO-G3
JESD-609 code	e6
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN BISMUTH
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	510 MHz
Base Number Matches	1

2SC3734B22-A Related Products

	2SC3734B22-A	2SC3734-A	2SC3734B23-A	2SC3734B24-A
Description	Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3	Si, NPN, RF SMALL SIGNAL TRANSISTOR	Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3	Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3
Reach Compliance Code	unknow	compli	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.2 A	0.2 A	0.2 A	0.2 A
Collector-based maximum capacity	4 pF	4 pF	4 pF	4 pF
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e6	e6	e6	e6
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	TIN BISMUTH	Tin/Bismuth (Sn98Bi2)	TIN BISMUTH	TIN BISMUTH
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	510 MHz	510 MHz	510 MHz	510 MHz
Base Number Matches	1	1	1	1
package instruction	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	-	3	3

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