INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD684
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 300V(Min)
·High
DC Current Gain-
:
h
FE
= 1500(Min.)@I
C
= 2A
·Low
Collector-Emitter Saturation Voltage-
: V
CE(sat)
= 2.0V(Max) @I
C
= 4A
APPLICATIONS
·Igniter
applications.
·High
voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
600
V
300
V
5
V
6
A
1
A
30
W
℃
I
C
Collector Current-Continuous
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
150
T
stg
Storage Temperature Range
-65~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SD684
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.5A; L= 40mH
300
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 4A; I
B
= 40mA
B
2.0
V
V
BE(
sat
)
I
CBO
Base-Emitter Saturation Voltage
I
C
= 4A; I
B
= 40mA
B
2.5
V
μA
Collector Cutoff Current
V
CB
= 600V; I
E
= 0
500
I
EBO
Emitter Cutoff Current
V
EB
= 5V; I
C
= 0
500
μA
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
C
OB
Collector Output Capacitance
Switching Times
t
on
Turn-On Time
t
s
Storage Time
w
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i
em
cs
.is
w
w
I
C
= 2A; V
CE
= 2V
1500
I
C
= 4A; V
CE
= 2V
200
V
CB
= 50V, I
E
= 0; f
test
= 1MHz
I
C
= 4A; I
B1
= -I
B2
= 40mA;
R
L
= 25Ω,V
CC
=100V
35
pF
1.0
μs
8.0
μs
t
f
Fall Time
5.0
μs
isc Website：www.iscsemi.cn
2
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