Ordering number : ENN680F
SANYO Semiconductors
DATA SHEET
2SB817/2SD1047
Features
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
140V/12A AF 60W Output Applications
· Capable of being mounted easily because of one-point fixing type plastic molded package
(Interchangeable with TO-3).
· Wide ASO because of on-chip ballast resistance.
· Good depenedence of f
T
on current and excellent high frequency responce.
The descriptions in parentheses are for the 2SB817 only : other descriptions than those in parentheses are common to
the 2SB817 and 2SD1047.
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
Conditions
Ratings
(—160
)
(—140
)
(—6
)
(—12
)
(—15
)
100
150
— 0 to +150
4
Un it
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(—80V, IE=0
)
VEB=(—4V, IC=0
)
VCE=(—5V, IC=(—1A
)
)
VCE=(—5V, IC=(—6A
)
)
VCE=(—5V, IC=(—1A
)
)
VCB=(—10V, f=1MHz
)
60*
20
15
(300)
210
MHz
pF
pF
Conditions
Ratings
min
typ
max
(—0.1
)
(—0.1
)
200*
Unit
mA
mA
* : The 2SB817/2SD1047 are classified by 1A h
FE
as follows :
Rank
hFE
D
60 to 120
E
100 to 200
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/90595MO (KOTO)/4017KI/6284KI, MT 8-3416/7039 No.680–1/5
2SB817/2SD1047
Continued from preceding page.
Parameter
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
Symbol
V BE
VCE(sat)
Conditions
VCE=(—5V, IC=(—1A
)
)
IC=(—5A, IB=(—0.5A
)
)
(—160
)
(—140
)
(—140
)
(—6
)
(0.25)
0.26
(0.53)
0.68
(1.61)
6.88
0.6
(1.1)
Ratings
min
typ
max
1.5
2.5
Unit
V
V
V
V
V
V
V
s
s
s
s
s
s
V(BR)CBO IC=(—5mA, IE=0
)
IC=(—5mA, RBE=∞
)
V(BR)CEO
IC=(—50mA, RBE=∞
)
V(BR)EBO
ton
tf
tstg
IE=(—5mA, IC=0
)
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Package Dimensions
unit:mm
2022A
[2SB817/2SD1047]
3.5
15.6
14.0
3.2
4.8
2.0
Switching Time Test Circuit
IB1
PW=20µs
INPUT
200VR
51Ω
VCC=20V
1µF
VBE= --2V
1µF
20Ω
IB2 1Ω
OUTPUT
2.6
1.3
1.2
15.0
20.0
10IB1= --10IB2=IC=1A
(For PNP, the polarity is reversed.)
1.6
2.0
20.0
0.6
1.0
1
0.6
2
3
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
--10
IC -- VCE
2SB817
1.4
10
IC -- VCE
24
200mA
160mA
Collector Current, IC — A
Collector Current, IC — A
--8
--2
4
0mA
--20
A
--160m
0m
A
8
0m
A
2SD1047
120m
A
80mA
--120mA
--80mA
--6
6
--4
--40mA
--20mA
4
40mA
20mA
--2
2
0
0
--10
--20
--30
IB=0
--40
0
0
10
20
30
IB=0
40
Collector-to-Emitter Voltage, VCE — V
ITR08419
Collector-to-Emitter Voltage, VCE — V
ITR08420
No.680–2/5
2SB817/2SD1047
--7
IC -- VBE
2SB817
VCE= --5V
Collector Current, IC — A
7
IC -- VBE
2SD1047
VCE=5V
--6
6
Collector Current, IC — A
--5
5
--4
4
--3
3
--2
2
--1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Base-to-Emitter Voltage, VBE — V
5
ITR08421
5
Base-to-Emitter Voltage, VBE — V
ITR08422
f T -- IC
Gain-Bandwidth Product, fT — MHz
2SB817
VCE= --5V
f T -- IC
2SD1047
VCE=5V
Gain-Bandwidth Product, fT — MHz
3
2
3
2
10
7
5
3
2
10
7
5
3
2
1.0
--0.1
2
3
5
7
Collector Current, IC — A
--1.0
2
3
5
--10
ITR08423
7
1.0
0.1
2
3
5
7
Collector Current, IC — A
1.0
2
3
5
10
ITR08424
7
1000
7
5
hFE -- IC
2SB817
VCE= --5V
1000
7
5
hFE -- IC
2SD1047
VCE=5V
DC Current Gain, hFE
2
DC Current Gain, hFE
3
3
2
100
7
5
3
2
100
7
5
3
2
10
--0.1
2
3
5
7 --1.0
2
3
5
Collector Current, IC — A
2
7 --10
2
ITR08425
10
0.1
2
3
5
7
1.0
2
3
5
7
Collector Current, IC — A
2
2
10
ITR08426
Cob -- VCB
2SB817
f=1MHz
f=1MHz
Output Capacitance, Cob — pF
Cob -- VCB
2SD1047
f=1MHz
f=1MHz
Output Capacitance, Cob — pF
1000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
--1.0
2
3
5
7
--10
2
3
5
--100
ITR08427
7
100
7
5
3
2
1.0
2
3
5
7
10
2
3
5
100
ITR08428
7
Collector-to-Base Voltage, VCB -- V
Collector-to-Base Voltage, VCB -- V
No.680–3/5
2SB817/2SD1047
3
2
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE (sat) — V
2SB817
IC / IB=10
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
0.1
VCE(sat) -- IC
2SD1047
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) — V
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
--0.1
2
3
5
7
Collector Current, IC — A
--1.0
2
3
5
--10
ITR08429
7
2
3
5
7
Collector Current, IC — A
1.0
2
3
5
10
ITR08430
7
5
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE (sat) — V
2SB817
IC / IB=10
5
3
2
VBE(sat) -- IC
2SD1047
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) — V
3
2
--10
7
5
3
2
10
7
5
3
2
--1.0
7
5
--0.1
2
3
5
7
--1.0
2
3
5
--10
ITR08431
7
1.0
7
5
0.1
2
3
5
7
1.0
2
3
5
10
ITR08432
7
Collector Current, IC — A
Collector Current, IC — A
2
10
ASO
ICP=15A
IC=12A
1m
s
10
ms
10
0m
DC
s
ope
rat
ion
120
PC -- Tc
2SB817 / 2SD1047
Collector Current, IC — A
7
5
3
2
Collector Dissipation, P
C
— W
100
80
60
1.0
7
5
3
2
0.1
5
40
20
2SB817 / 2SD1047
(For PNP, minus sign is omitted.)
7
0
5
7
100
2
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE — V
ITR08433
10
2
3
Case Temperature, Tc —°C
ITR08434
No.680–4/5
2SB817/2SD1047
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
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or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are subject
to change without notice.
PS No.680–5/5
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