Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
| Parameter Name | Attribute value |
| Parts packaging code | TO-220F |
| package instruction | TO-220F, 3 PIN |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 10 A |
| Collector-emitter maximum voltage | 40 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 90 |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 40 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 120 MHz |
| Base Number Matches | 1 |
| 2SD1445APQ | 2SD1445Q | 2SD1445PQ | 2SD1445P | |
|---|---|---|---|---|
| Description | Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN | Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SC-67, TO-220F-A1, 3 PIN | Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN | Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SC-67, TO-220F-A1, 3 PIN |
| Parts packaging code | TO-220F | TO-220FA1 | TO-220F | TO-220FA1 |
| package instruction | TO-220F, 3 PIN | SC-67, TO-220F-A1, 3 PIN | TO-220F, 3 PIN | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknow | unknow | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Maximum collector current (IC) | 10 A | 10 A | 10 A | 10 A |
| Collector-emitter maximum voltage | 40 V | 20 V | 20 V | 20 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 90 | 90 | 90 | 130 |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | NPN | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 120 MHz | 120 MHz | 120 MHz | 120 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 |
| Maximum operating temperature | 150 °C | 150 °C | - | 150 °C |
| Maximum power dissipation(Abs) | 40 W | 40 W | - | 40 W |
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