RO-P-DS-3011 - -
1.2W S/C-Band Power Amplifier
3.0-6.0 GHz
Preliminary Information
MAAPGM0022-DIE
Features
♦
♦
♦
♦
3.0-6.0 GHz GaAs MMIC Amplifier
3.0-6.0 GHz Operation
1 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
Self-Aligned MSAG
®
MESFET Process
Primary Applications
♦
♦
♦
♦
3.4-3.6 GHz WLL
3.7-4.2 GHz SatCom
5.1-5.9 GHz HyperLAN
5.8GHz ISM, RADAR
Description
The
MAAPGM0022-Die
is a 2-stage 1.2 W power amplifier
with on-chip bias networks. This product is fully matched to
50 ohms on both the input and output. It can be used as a
power amplifier stage or as a driver stage in high power
applications.
Each device is 100% RF tested on wafer to ensure
performance compliance. The part is fabricated using M/A-
COM’s repeatable, high performance and highly reliable
GaAs Multifunction Self-Aligned Gate (MSAG
®
) MESFET
Process. This process features silicon nitride passivation
and polyimide scratch protection.
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50
Ω,
V
DD
= 8V, V
GG
= -2V, P
in
= 20 dBm
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Input VSWR
Gate Current
Drain Current
Output Third Order Intercept
Noise Figure
2
nd
Harmonic
3
rd
Harmonic
Symbol
f
P
OUT
PAE
P1dB
G
VSWR
I
GG
I
DD
OTOI
NF
2f
3f
Typical
3.0-6.0
31
27
31
17
1.5:1
< 12
< 900
43
6
-10
-20
mA
mA
dBm
dB
dBc
dBc
Units
GHz
dBm
%
dBm
dB
1. T
B
= MMIC Base Temperature
RO-P-DS-3011 - -
2/6
1.2W S/C-Band Power Amplifier
Maximum Operating Conditions
1
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF)
Quiescent Power Dissipated (No RF)
Junction Temperature
Storage Temperature
Symbol
P
IN
V
DD
V
GG
I
DQ
P
DISS
T
J
T
STG
Absolute Maximum
25.0
+12.0
-3.0
950
6.3
180
-55 to +150
MAAPGM0022-DIE
Units
dBm
V
V
mA
W
°C
°C
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Drain Voltage
Gate Voltage
Input Power
Junction Temperature
MMIC Base Temperature
Symbol
V
DD
V
GG
P
IN
T
J
T
B
Min
4.0
-2.3
Typ
8.0
-2.0
Max
10.0
-1.5
23.0
150
Note 2
Unit
V
V
dBm
°C
°C
2. Maximum MMIC Base Temperature = 150°C — 12.7 °C/W * V
DD
* I
DQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 8 V.
3. Adjust
V
GG
to set I
DQ
, (approximately @ –2 V).
4. Set RF input.
5.
Power down sequence in reverse. Turn gate
voltage off last.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
V 1.00
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3011 - -
3/6
1.2W S/C-Band Power Amplifier
50
MAAPGM0022-DIE
50
POUT
PAE
40
40
30
30
20
20
10
10
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at V
DD
= 8V
and P
in
= 20 dBm.
50
POUT
PAE
40
40
50
30
30
20
20
10
10
0
4
5
6
7
8
9
10
0
Drain Voltage (V)
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at f
o
= 4.5 GHz.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
V 1.00
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3011 - -
4/6
1.2W S/C-Band Power Amplifier
50
VDD = 4
VDD = 8
40
MAAPGM0022-DIE
VDD = 6
VDD = 10
30
20
10
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
30
GAIN
25
VSWR
5
6
20
4
15
3
10
2
5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
1
Frequency (GHz)
Figure 4. Small Signal Gain and Input VSWR vs. Frequency at V
DD
= 8V.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
V 1.00
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3011 - -
5/6
1.2W S/C-Band Power Amplifier
MAAPGM0022-DIE
Mechanical Information
Chip Size: 2.980 x 2.980 x 0.075 mm
0.127mm.
0.477mm.
(
117
2.476mm.
x 117 x 3 mils)
2.980mm.
2.828mm.
V
GG
V
DD
OUT
2.828mm.
1.490mm.
1.490mm.
IN
V
GG
V
DD
0.152mm.
0
0
0.152mm.
Chip edge to bond pad dimensions are shown to the center of the bond pad.
0.477mm.
2.476mm.
2.853mm.
Figure 5. Die Layout
Bond Pad Dimensions
Pad
RF In and Out
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
Size (µm)
100 x 200
200 x 150
150 x 150
Size (mils)
4x8
8x6
6x6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
V 1.00
Visit www.macom.com for additional data sheets and product information.
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