EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

2SB1202R(TO-252)

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size130KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

2SB1202R(TO-252) Overview

Transistor

2SB1202R(TO-252) Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)100
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)15 W
surface mountYES
Base Number Matches1

2SB1202R(TO-252) Related Products

2SB1202R(TO-252) 2SB1202U(TO-252) 2SB1202S(TO-252)
Description Transistor Transistor Transistor
Reach Compliance Code compli compli compliant
Maximum collector current (IC) 3 A 3 A 3 A
Configuration Single Single Single
Minimum DC current gain (hFE) 100 280 140
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 15 W 15 W 15 W
surface mount YES YES YES
Base Number Matches 1 1 1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号