2SB1184P(TO-251) datasheet, PDF

Datasheet> All Categories > Discrete semiconductor> The transistor> 2SB1184P(TO-251)

2SB1184P(TO-251): DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size114KB，3 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

Download Datasheet Parametric View All

2SB1184P(TO-251) Overview

Transistor

2SB1184P(TO-251) Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
Base Number Matches	1

2SB1184P(TO-251) Preview

Download Datasheet

View All

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251/TO-252-2Plastic-Encapsulate Transistors

2SB1184

TO-251

TO-252-2

TRANSISTOR (PNP)

FEATURES

Low V

CE(sat)

. V

CE(sat)

= -0.5V (Typ.) (I

= -2A / -0.2A)

Complements the 2SD1760 / 2SD1864.

MAXIMUM RATINGS (T

=25

℃

unless otherwise noted)

Symbol

CBO

CEO

EBO

stg

Parameter

Collector Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-60

-50

-5

-3

150

-55-150

Units

℃

BASE

COLLECTOR

EMITTER

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

FE(1)

CE(sat)

BE(sat)

unless

Test

otherwise

conditions

specified)

MIN

TYP

MAX

UNIT

-50

µA,

-1

mA, I

-50

µA,

-40

V, I

-4

V, I

-3

V, I

-0.5

-2

A, I

-0.2

-1.5

A, I

-0.15

-5

V, I

-0.5

A, f=

MHz

-10

V, I

=0, f=

MHz

-60

-50

-5

-1

390

-1

-1.2

µA

MHz

CLASSIFICATION OF

Rank

Range

Marking

FE(1)

82-180

120-270

180-390

Recommended Resources

Insulation resistance meter circuit diagram

Low distortion, low noise amplifier for high impedance circuits

RTS997 (3-tone) circuit

Monostable circuit using operational amplifier

Clever use of LM386 as speaker tester circuit diagram

555 Meifeng brand electric fan simulates natural wind control circuit

STM32F103 vs MM32F103: [size=4]Many programmers and new students have been asking me this question: which one is more suitable between STM32F103 and MM32F103? Our company has been developing and testing for a period of time...; 灞波儿奔 Microcontroller MCU

Users report poor results of MSN and Yahoo Messenger interconnection: Although MSN and Yahoo Messenger have achieved intercommunication, users' feedback shows that the current effect is not very ideal. 　　According to the Associated Press, MSN and Yahoo Messenger achieve...; xiaoxin RF/Wirelessly

CIO focuses on three core applications: As a leader of enterprise informatization, CIOs should not only have a strategic vision to correctly view the help of informatization to enterprises, but also should judge the situation and clarify ho...; tmily RF/Wirelessly

New generation of ESD protection devices no longer require VCC connection: Due to their ever-decreasing process nodes, digital and analog ICs are increasingly susceptible to damage from electrostatic discharge (ESD), so discrete ESD protection diodes are a necessary componen...; qwqwqw2088 Analogue and Mixed Signal

allegro16.6 Questions about via opening and via cover oil?: I just learned Allegro and I don't quite understand how to set up via opening and capping. When making vias, I added SOLDERMASK (as shown in Figure 1). I have the following questions to ask you: Quest...; hyh0512 PCB Design

MSP430 interrupt mechanism: [size=4]Interrupts largely reflect the performance of a single-chip microcomputer. From this point of view, MSP430 has done a good job in interrupts, mainly providing a very rich interrupt source, inc...; 灞波儿奔 Microcontroller MCU

Popular Components