2SC2999E datasheet, PDF - EEWORLD Datasheet

2SC2999E: DescriptionHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SMALL, SPA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size139KB，5 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SC2999E Overview

HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SMALL, SPA, 3 PIN

Parameter Name	Attribute value
Objectid	1481159275
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
Maximum collector current (IC)	0.03 A
Collector-based maximum capacity	0.9 pF
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
highest frequency band	HIGH FREQUENCY BAND
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	750 MHz

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