2SC1213AKCTZ-E datasheet, PDF - EEWORLD Datasheet

2SC1213AKCTZ-E: Description2SC1213AKCTZ-E; CategoryDiscrete semiconductor The transistor; File Size103KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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2SC1213AKCTZ-E Overview

2SC1213AKCTZ-E

Parameter Name	Attribute value
Brand Name	Renesas
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-92(1)
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Manufacturer packaging code	PRSS0003DA-A3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e2
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.4 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN COPPER
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	120 MHz
Base Number Matches	1

	2SC1213AKCTZ-E	2SC1213AKDTZ-E
Description	2SC1213AKCTZ-E	2SC1213AKDTZ-E
Brand Name	Renesas	Renesas
Parts packaging code	TO-92(1)	TO-92(1)
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3
Manufacturer packaging code	PRSS0003DA-A3	PRSS0003DA-A3
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	160
JEDEC-95 code	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.4 W	0.4 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	120 MHz	120 MHz
Base Number Matches	1	1

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