2SA1312GRTE85R datasheet, PDF - EEWORLD Datasheet

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Datasheet> All Categories > Discrete semiconductor> The transistor> 2SA1312GRTE85R

2SA1312GRTE85R: DescriptionTRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size304KB，5 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SA1312GRTE85R Overview

TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal

2SA1312GRTE85R Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

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Description	TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal	Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R	Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R	TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Base Number Matches	1	1	1	1	1	1	1	1
package instruction	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
ECCN code	EAR99	-	-	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	-	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.1 A	-	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	120 V	-	120 V	120 V	120 V	120 V	120 V	120 V
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	200	-	200	200	350	200	350	200
JEDEC-95 code	TO-236	-	-	TO-236	TO-236	TO-236	TO-236	TO-236
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	-	1	1	1	1	1	1
Number of terminals	3	-	3	3	3	3	3	3
Maximum operating temperature	125 °C	-	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	-	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	-	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	-	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
VCEsat-Max	0.3 V	-	-	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V

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