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2SC3413B

Description
Small Signal Bipolar Transistor, 0.1A I(C), NPN, SPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size21KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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2SC3413B Overview

Small Signal Bipolar Transistor, 0.1A I(C), NPN, SPAK-3

2SC3413B Parametric

Parameter NameAttribute value
package instructionSPAK-3
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1

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