2N5410 datasheet, PDF - EEWORLD Datasheet

2N5410: DescriptionPower Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-111, Metal, 4 Pin,; CategoryDiscrete semiconductor The transistor; File Size64KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-111, Metal, 4 Pin,

Parameter Name	Attribute value
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-111
JESD-30 code	O-MUPM-D4
Number of components	1
Number of terminals	4
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	PNP
Maximum power dissipation(Abs)	30 W
Certification status	Not Qualified
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Transistor component materials	SILICON
Nominal transition frequency (fT)	60 MHz
VCEsat-Max	0.6 V
Base Number Matches	1

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