2SB874
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD1177
Outline
TO-220AB
1
2 3
1. Base
2. Collector
(Flange)
3. Emitter
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
Tj
Tstg
1
Rating
–100
–60
–5
–2
–3
20
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB874
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–100
–60
–5
—
—
1
Typ
—
—
—
—
—
—
—
—
–0.6
250
50
Max
—
—
—
–1.0
–1.0
200
—
–1.4
–1.0
—
—
Unit
V
V
V
µA
µA
Test conditions
I
C
= –1 mA, I
E
= 0
I
C
= –10 mA, R
BE
=
∞
I
E
= –1 mA, I
C
= 0
V
CB
= –80 V, I
E
= 0
V
EB
= –5 V, I
C
= 0
V
CE
= –5 V, I
C
= –0.5 A*
V
CE
= –5 V, I
C
= –2 A*
2
2
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
V
(BR)EBO
I
CBO
I
EBO
h
FE1
*
h
FE2
Base to emitter voltage
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
V
BE
V
CE(sat)
f
T
Cob
60
40
—
—
—
—
V
V
MHz
pF
V
CE
= –5 V, I
C
= –2 A*
2
I
C
= –1.5 A I
B
= –0.15 A*
V
CE
= –5 V, I
C
= –0.5 A*
2
2
V
CB
= –10 V, I
E
= 0, f = 1 MHz
Notes: 1. The 2SB874 is grouped by h
FE
as follows.
2. Pulse test
B
60 to 120
C
100 to 200
Maximum Collector Dissipation Curve
30
Collector power dissipation Pc (W)
–10
Area of Safe Operation
i
C (peak)
(–10 V, –3 A)
Collector Current I
C
(A)
–3
–1.0
–0.3
–0.1
–0.03
–0.01
–2
(–20 V, –1 A)
Ta = 25°C
1 Shot pulse
(–13.3 V, –3 A)
(–30 V, –1.33 A)
s
1m
=
on
PW
ati
ms
er )
10
Op 25
°
C
DC =
(T
C
20
10
I
C (max)
(–10 V, –2 A)
(–60 V, –0.25 A)
(–60 V, –0.15 A)
(–60 V, –0.1 A)
–5 –10 –20
–50 –100 –200
Collector to emitter Voltage V
CE
(V)
0
50
100
Case Temperature T
C
(°C)
150
2
2SB874
Typical Output Characteristics
–1
–12 1
Typical Transfer Characteristics
–2
–1.0
Collector current I
C
(A)
–0.5
75°C
–0.2
–0.1
–0.05
V
CE
= –5 V
–0.02
–0.5
–1.0
–1.5
Base to emitter voltage V
BE
(V)
T
C
= 25°C
–25°C
–1.0
–10
–9
Collector Current I
C
(A)
–0.8
–8
–7
–6
–5
–0.6
–4
–3
–0.4
–2
–0.2
T
C
= 25°C
0
–1 mA
I
B
= 0
–2
–4
–6
–8
–10
Collector to emitter Voltage V
CE
(V)
DC Current Transfer Ratio vs.
Collector Current
V
CE
= –5 V
DC current transfer ratio h
FE
500
T
C
= 75°C
200
100
–25°C
50
25°C
Collector to emitter saturation voltage
V
CE (sat)
(V)
1,000
–1.0
Collector to Emitter Saturation
Voltage vs. Collector Current
–0.3
75°C
–0.1
25°C
T
C
= –25°C
–0.03
I
C
/I
B
= 10
–0.01
–0.02
–0.05 –0.1 –0.2
–0.5 –1
Collector current I
C
(A)
–2
20
10
–0.02 –0.05 –0.1 –0.2 –0.5 –1
Collector current I
C
(A)
–2
3
2SB874
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
4
2SB874
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
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Semiconductor & IC Div.
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USA
Tel: 415-589-8300
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Continental Europe
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München
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United Kingdom
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5
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