2SA812
PNP General Purpose Transistors
P b
Lead(Pb)-Free
1
2
3
SOT-23
MAXIMUM RATINGS
(Ta=25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation
T
A
=25°C
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
Tj
Tstg
Value
-60
-50
-5.0
-100
200
+150
-55 to +150
Unit
V
V
V
mA
mW
°C
°C
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2SA812
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
I
C
= -100µA, I
E
= 0A
Collector-Emitter Breakdown Voltage
I
C
= -1mA, I
B
= 0A
Emitter-Base Breakdown Voltage
I
E
= 100µA, I
C
=0
Collector Cutoff Current
V
CB
= -60V, I
E
= 0A
Emitter Cutoff Current
V
EB
= -5V, I
C
= 0A
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
-60
-50
-5.0
-
-
Typ
-
-
-
-
-
Max
-
-
-
-0.1
-0.1
Unit
V
V
V
µA
µA
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
I
C
= -100mA, I
B
= -10mA
Collector-Emitter Voltage
I
C
= -1mA, V
CE
= -6V,
DC Current Transfer Ration
V
CE
= -6V, I
C
= -1mA
V
CE(sat)
V
BE(on)
h
FE
-
-
90
-
-
-
-0.3
-0.68
600
V
V
SMALL-SIGNAL CHARACTERISTICS
Transition frequence
V
CE
=-6V, I
C
= -10mA
fT
180
-
-
MHz
CLASSIFICATION h
FE
Range
Marking
90-180
M4
135-270
M5
200-400
M6
300-600
M7
WEITRON
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08-Dec-06