Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN
Parameter Name | Attribute value |
Parts packaging code | TO-3 |
package instruction | FLANGE MOUNT, O-MBFM-P2 |
Contacts | 2 |
Reach Compliance Code | unknow |
Avalanche Energy Efficiency Rating (Eas) | 750 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 500 V |
Maximum drain current (Abs) (ID) | 12 A |
Maximum drain current (ID) | 12 A |
Maximum drain-source on-resistance | 0.4 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-204AA |
JESD-30 code | O-MBFM-P2 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -55 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 4 W |
Maximum power dissipation(Abs) | 150 W |
Maximum pulsed drain current (IDM) | 48 A |
Certification status | Qualified |
Guideline | MIL-19500 |
surface mount | NO |
Terminal form | PIN/PEG |
Terminal location | BOTTOM |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Maximum off time (toff) | 300 ns |
Maximum opening time (tons) | 225 ns |
Base Number Matches | 1 |