D2082UKG4 datasheet, PDF - EEWORLD Datasheet

D2082UKG4: DescriptionRF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size17KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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D2082UKG4 Overview

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	SOURCE
Configuration	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDFM-F4
JESD-609 code	e4
Number of components	2
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

	D2082UKG4	D2082UK
Description	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified?	conform to	conform to
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	COMMON SOURCE, 2 ELEMENTS	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	65 V	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDFM-F4	R-CDFM-F4
JESD-609 code	e4	e4
Number of components	2	2
Number of terminals	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	GOLD	GOLD
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON

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