EEPROM, 32KX8, 250ns, Parallel, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERDIP-28
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Atmel (Microchip) |
Parts packaging code | DIP |
package instruction | DIP, DIP28,.6 |
Contacts | 28 |
Reach Compliance Code | compliant |
ECCN code | 3A001.A.2.C |
Maximum access time | 250 ns |
Other features | AUTOMATIC WRITE |
command user interface | NO |
Data polling | YES |
Data retention time - minimum | 10 |
Durability | 100000 Write/Erase Cycles |
JESD-30 code | R-GDIP-T28 |
JESD-609 code | e0 |
length | 37.25 mm |
memory density | 262144 bit |
Memory IC Type | EEPROM |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 28 |
word count | 32768 words |
character code | 32000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 32KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC, GLASS-SEALED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP28,.6 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
page size | 64 words |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 5 V |
Programming voltage | 5 V |
Certification status | Not Qualified |
Maximum seat height | 5.72 mm |
Maximum standby current | 0.0003 A |
Maximum slew rate | 0.08 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
switch bit | YES |
width | 15.24 mm |
Maximum write cycle time (tWC) | 10 ms |