NE76118-TI datasheet, PDF - EEWORLD Datasheet

NE76118-TI: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size104KB，4 Pages; ManufacturerNEC Electronics

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NE76118-TI Overview

RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,

Parameter Name	Attribute value
Maker	NEC Electronics
Reach Compliance Code	unknown
Other features	LOW NOISE, HIGH RELIABILITY
Configuration	SINGLE
Minimum drain-source breakdown voltage	5 V
FET technology	METAL SEMICONDUCTOR
highest frequency band	S BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE

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