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MMBFJ270T/R13

Description
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size193KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBFJ270T/R13 Overview

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, ROHS COMPLIANT, PLASTIC PACKAGE-3

MMBFJ270T/R13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ConfigurationSINGLE
FET technologyJUNCTION
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

MMBFJ270T/R13 Preview

Download Datasheet
MMBFJ270
P-CHANNEL SWITCH
FEATURES
• This device is designed for low level analog switching sample and
hold circuits and chopper stabilized amplifiers
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.008gram
Marking : 270
3
G
D
1
S
2
ABSOLUTE MAXIMUM RATINGS T
J
=25
o
C
PARAMETER
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
SYMBOL
V
DG
V
GS
I
GF
T
J,
T
STG
VALUE
-30
30
50
-55 to +150
UNITS
V
V
mA
o
C
THERMAL CHARACTERISTICS
PARAMETER
Total Device Dissipaton Derate above 25
o
C
Thermal Resistance, Junciton to Ambient (Note 1)
Note 1 : Device mounted on FR-4 PCB, 70 x 60 x 1mm.
SYMBOL
P
D
R
JA
VALUE
225
1.8
556
UNITS
mW
mW/
o
C
o
C/W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.0.3-SEP.18.2009
PAGE . 1
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