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NAND01GW4A0DZA6F

Description
64MX16 FLASH 3V PROM, 12000ns, PBGA63, 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63
Categorystorage    storage   
File Size150KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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NAND01GW4A0DZA6F Overview

64MX16 FLASH 3V PROM, 12000ns, PBGA63, 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63

NAND01GW4A0DZA6F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeBGA
package instructionBGA,
Contacts63
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time12000 ns
JESD-30 codeR-PBGA-B63
JESD-609 codee1
memory density1073741824 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals63
word count67108864 words
character code64000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64MX16
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage3 V
Certification statusNot Qualified
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
Terminal formBALL
Terminal locationBOTTOM
Maximum time at peak reflow temperature30

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