Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Universal Semiconductor Inc |
| package instruction | UNCASED CHIP, R-XUUC-N3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOW THRESHOLD |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 20 V |
| Maximum drain current (Abs) (ID) | 0.05 A |
| Maximum drain current (ID) | 0.05 A |
| Maximum drain-source on-resistance | 70 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 0.5 pF |
| JESD-30 code | R-XUUC-N3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 125 °C |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | UNCASED CHIP |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.3 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | NO LEAD |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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