GaAs PIN Diode Chips
V3
Features
♦
♦
♦
♦
♦
♦
Anode
May be Driven Directly by TTL Signals
RoHS Compliant
Low Series Resistance
Fast Switching Speed
No Reverse Bias Required
RoHS Compliant
Description
Gallium Arsenide PIN diodes offer improved
performance characteristics over silicon in many
microwave semiconductor applications. These
benefits result from the intrinsic semiconductor
properties of GaAs. Its inherent high carrier
mobility results in a low resistance fast switching
device. The low carrier concentration in the I
region layer produces a near zero punch through
bias voltage. Gallium Arsenide's high band gap
also assures it will operate at high operating
temperatures.
Switching speeds in the low nanosecond range
using an inexpensive TTL buffer logic is attainable
with GaAs PIN diodes. This performance can be
achieved because GaAs PIN diodes exhibit high
impedance at a positive bias (up to .5V). Reverse
bias is not required for many GaAs PIN diode
applications. Low loss, in switch and phase shifter
circuits at frequencies up to 40 GHz is possible as
a result of low parasitic series resistance in the
conducting and non-conducting states.
M/A-COM’s Technology Solutions GaAs PIN diode
chips are also available in several different
package styles. (See page 4 of this datasheet)
Full Area Cathode
MIL-STD 750 Environmental Ratings
Parameter
Temp. Cycling
Vibration
Constant Acceleration
Moisture Resistance
(Packaged diodes)
Method
1051
2056
2006
Level
5cycles
-65°C to +150°C
15g’s
20,000g”s
Absolute Maximum Ratings
1
Parameter
Operating Temperature
Storage Temperature
Power Dissipation
Junction Temperature
Mounting Temperature
1
Maximum Value
-65°C to +175°C
-65°C to +175°C
0.25W @ 25°C
+175°C
+320°C for 10 seconds
1021
10 Days
1. Exceeding these limits may cause permanent damage.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
GaAs PIN Diode Chips
V3
GaAs Chip Specification @ T
AMB
= +25°C
Nominal Characteristics
Part Number
Max. Rev.
Volt.
1
V
R
< 10 µA
V
DC
Max. Cap.
1 MHz
C
j
@ -10 V
pF
Max. Series Res.
2
1 GHz
R
S
@ 20 mA
Ω
Carrier Lifetime
T
L
@ I
FOR
= 10 mA
I
REV
= 6 mA
ηS
Switching Speed
3
7 GHz
ηS
MA4GP022-277
MA4GP030-277
4
50
100
0.15
0.06
1.0
2.0
20
25
10
15
Notes:
1. V
R
( Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is measured to be <10µA.
2. Chip is mounted into case style ODS 30 ceramic package.
3. Switching speed is measured between 1 dB and 20 dB loss in a shunt mounted switch.
4. Available as chip with flying leads. Part number is MADP-000030-13930G.
Case Style 277 (Chip)
A
B
Typical TTL Driver Circuit
B
C
Anode
Dimension
A
B
C
2
Mils
7 ± .5
11 ± 1
2.2 ± .3
Millimeters
.178 ± .013
.279 ± .025
.056 ± .008
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
GaAs PIN Diode Chips
V3
Typical Performance @ T
AMB
= +25°C
MA4GP022
MA4GP030
Figure 3. Typical Capacitance vs. Voltage at 1 GHz
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
GaAs PIN Diode Chips
V3
Ordering Information
The GaAs Chip Specifications shown in the table on page 2 are for the stand alone die, package style 277. Note that the table
lists the bare die junction capacitance and that the total capacitance for the base part in an alternative package will differ. The
total capacitance in an alternative package can be computed by adding the capacitance shown in the table on page 2 to the
parasitic capacitance of the alternative package as defined in the
Package Parasitics
table below. The base part numbers are
only available in the case styles shown in the
Package Style Availability
table below. To order, indicate the base part number
followed by a dash and the desired package style.
For example:
The MA4GP030-30 is the MA4GP030 chip in the 30 style package.
Package Parasitics
Package Style Inductance (nH)
30
120
137
276
277
1056
1393
*
0.40
0.40
0.40
0.40
N/A (Chip)
0.20
See note
*
Package Style Availability
Cap. (pF)
0.18
0.13
0.13
0.13
N/A (Chip)
0.20
See note
*
Base Part Number
MA4GP022
MA4GP030
Package Styles
137, 277
30, 120, 276, 277, 1056, 1393
*
*Note:To
order the MA4GP030 chip with flying leads
use part number MADP-000030-13930G.
Note:
Chip with flying leads. Inductance and capacitance will
vary according to final lead length after installation.
Alternative Package Styles
Style 30
B
Dimension
A
B
G
Mils
121 ± 4
62 ± 2
215 ± 10
91 ± 6
62 ± 2
62 ± 2
20 ± 4
81 ± 2
Millimeters
3073 ± 102
1575 ± 51
5461 ± 254
2311 ± 152
1575 ± 51
1575 ± 51
508 ± 102
2057 ± 51
F
C
D
C
D
E
F
E
H
A
G
H
Style 120
Dimension
B
Mils
53 ± 2
45 ± 5
Millimeters
1346 ± 51
1143 ± 127
A
B
A
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
GaAs PIN Diode Chips
V3
Alternative Package Styles (cont’d)
Style 137
C
B
A
Dimension
Cathode
mils
100 ± 10
20 ± 2
100 ± 5
4±1
50 max.
14 max.
mm
2540 ± 254
508 ± 51
2540 ± 127
102 ± 25
1270 max.
356 max.
A
B
C
D
E
F
E
D
F
Style 276
A
B
Dimension
C
D
mils
15 ± 5
45 ± 5
5 max.
53 ± 2
200 min.
20 ± 1
mm
381 ± 127
1143 ± 127
127 max.
1346 ± 51
5080 min.
508 ± 25
A
B
C
D
E
F
F
E
Style 1056
A
Dimension
A
mils
70 ± 5
37 ± 4
33 ± 3
15 ± 2
12 ± 2
48 ± 5
mm
1778 ± 127
940 ± 102
838 ± 76
381 ± 51
305 ± 51
1219 ± 127
Cathode
A
B
C
D
B
D
E
E
F
F
C
Style 1393
A
B
Dimension
A
B
C
D
E
mils
300 ± 50
12 ±1
5±1
0.25 ± .05
7±1
mm
7.62 ± 1.27
0.305 ± 0.025
0.127 ± 0.025
0.0064 ± 0.0013
0.178 ± 0.025
Anode
B
D
C
Full Area Cathode
5
E
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.