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GC1500B-35

Description
Variable Capacitance Diode, 0.6pF C(T),
CategoryDiscrete semiconductor    diode   
File Size123KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

GC1500B-35 Overview

Variable Capacitance Diode, 0.6pF C(T),

GC1500B-35 Parametric

Parameter NameAttribute value
MakerMicrosemi
Reach Compliance Codecompliant
ECCN codeEAR99
Nominal diode capacitance0.6 pF
Diode typeVARIABLE CAPACITANCE DIODE
minimum quality factor4000
surface mountYES
TOC
Tuning Varactors
30 VOLT ABRUPT JUNCTION VARACTOR DIODES
DESCRIPTION
The GC1500 series varactors are silicon abrupt junction
devices. They offer the highest Q and lowest series resis-
tance available in a 30 Volt silicon varactor.
RATINGS
Minimum Voltage Breakdown: 30 V at 10µA
Maximum Leakage Current at:
25 V and 25ºC
0.02 µA
25 V and 125ºC
2.00 µA
Capacitance-Temp. Coefficient: 300 ppm/ºC at V
R
=-4V
Operating Temperature:
Storage Temperature:
-55ºC to +150ºC
-65ºC to +200ºC
APPLICATIONS
The GC1500 series varactors are used for narrow to
moderate band width tuning. They are available in val-
ues appropriate for VHF through KU band frequencies.
These devices are best used in low phase noise voltage
controlled oscillators, low loss voltage variable filters
and phase shifters.
Standard capacitance tolerance is ±10% Other capaci-
tance values and custom mechanical configurations are
also available. All specifications shown are based on
style 30 package and include .18 pF case capacitance.
Consult package outline section of this catalog for other
case styles available. Complete electrical and mechani-
cal data is also provided.
Typical Junction Capacitance vs Reverse Bias
SEMICONDUCTOR OPERATION
75 T
echnology Drive • Lowell, MA 01851 • T
el: 978-442-5600 • Fax: 978-937-3748
15

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