EB52E8C4V-8.000M TR
Series
RoHS Compliant (Pb-free) 5mm x 7mm Ceramic SMD
3.3Vdc LVCMOS TC(VC)XO
Operating Temperature Range
-20°C to +70°C
Frequency Stability
±1.5ppm Maximum
RoHS
Pb
Packaging Options
Tape & Reel
EB52E8 C 4 V -8.000M TR
Nominal Frequency
8.000MHz
Control Voltage
1.65Vdc ±1.65Vdc
ELECTRICAL SPECIFICATIONS
Nominal Frequency
Frequency Tolerance
Frequency Stability
Frequency Stability vs. Input Voltage
Frequency Stability vs. Aging
Frequency Stability vs. Load
Operating Temperature Range
Supply Voltage
Input Current
Output Voltage Logic High (Voh)
Output Voltage Logic Low (Vol)
Rise/Fall Time
Duty Cycle
Load Drive Capability
Output Logic Type
Control Voltage
Control Voltage Range
Frequency Deviation
Linearity
Transfer Function
Input Impedance
Phase Noise
Tri-State Input Voltage (Vih and Vil)
RMS Phase Jitter
Start Up Time
Storage Temperature Range
8.000MHz
±1.0ppm Maximum (Measured at 25°C ±2°C, at Vdd=3.3Vdc and Vc=1.65Vdc)
±1.5ppm Maximum (Inclusive of Operating Temperature Range. Measured at Vdd=3.3Vdc and
Vc=1.65Vdc)
±0.3ppm Maximum (±5%)
±1ppm/year Maximum (at 25°C)
±0.3ppm Maximum (±10%)
-20°C to +70°C
3.3Vdc ±5%
10mA Maximum
90% of Vdd Minimum (IOH = -4mA)
10% of Vdd Maximum (IOL = +4mA)
5nSec Maximum (Measured at 20% to 80% of Waveform)
50 ±5(%) (Measured at 50% of Waveform)
15pF Maximum
CMOS
1.65Vdc ±1.65Vdc
0.0Vdc to Vdd
±5ppm Minimum
5% Maximum
Positive Transfer Characteristic
100kOhms Minimum
-80dBc/Hz at 10Hz Offset, -115dBc/Hz at 100Hz Offset, -135dBc/Hz at 1kHz Offset, and -145dBc/Hz at
>=10kHz Offset (Typical Values at 12.800MHz)
+0.9Vdd Minimum to Enable Output; +0.1Vdd Maximum to Disable Output (High Impedance); No Connect
to Enable Output
1pSec Maximum (Fj = 12kHz to 20MHz)
10mSec Maximum
-40°C to +125°C
ENVIRONMENTAL & MECHANICAL SPECIFICATIONS
Fine Leak Test
Gross Leak Test
Mechanical Shock
Resistance to Soldering Heat
Resistance to Solvents
Solderability
Temperature Cycling
Vibration
MIL-STD-883, Method 1014 Condition A
MIL-STD-883, Method 1014 Condition C
MIL-STD-202, Method 213 Condition C
MIL-STD-202, Method 210
MIL-STD-202, Method 215
MIL-STD-883, Method 2003
MIL-STD-883, Method 1010
MIL-STD-883, Method 2007 Condition A
www.ecliptek.com | Specification Subject to Change Without Notice | Rev C 3/11/2011 | Page 1 of 6
EB52E8C4V-8.000M TR
MECHANICAL DIMENSIONS (all dimensions in millimeters)
PIN
CONNECTION
Do Not Connect
Do Not Connect
Do Not Connect
Ground
Output
Do Not Connect
Do Not Connect
Tri-State
Supply Voltage
Voltage Control
5.00
±0.10
2.00
MAX
0.40
±0.10
1.00 ±0.10 (x5)
0.80 ±0.10 (x4)
4
3
2
1
1.27
±0.10
(x4)
0.80
±0.10
10
2.54
±0.10
(x2)
5
6
7
8
9
0.60
±0.10
(x6)
1.00
±0.10
(x4)
1
2
3
4
5
6
7
8
9
10
7.00
±0.10
MARKING
ORIENTATION
LINE MARKING
1
EXX.XXX
E=Ecliptek Designator
XX.XXX=Nominal
Frequency in MHz
XXYZZ
XX=Ecliptek Manufacturing
Code
Y=Last Digit of the Year
ZZ=Week of the Year
2
Suggested Solder Pad Layout
All Dimensions in Millimeters
1.34
1.4(x4)
1.20
±0.20
(x4)
1.3
MAX
1.3
2.20
±0.15
Solder Land
(X4)
1.4
1.0
1.8
4.6
Solder Land (x5)
1.2(x4)
All Tolerances are ±0.1
www.ecliptek.com | Specification Subject to Change Without Notice | Rev C 3/11/2011 | Page 2 of 6
EB52E8C4V-8.000M TR
OUTPUT WAVEFORM & TIMING DIAGRAM
TRI-STATE INPUT
V
IH
V
IL
CLOCK OUTPUT
V
OH
80% of Waveform
50% of Waveform
20% of Waveform
V
OL
OUTPUT DISABLE
(HIGH IMPEDANCE
STATE)
t
PLZ
Fall
Time
Rise
Time
T
W
T
Duty Cycle (%) = T
W
/T x 100
t
PZL
Test Circuit for CMOS Output
Switch
Power
Supply
Oscilloscope
Frequency
Counter
Current
Meter
Power
Supply
Voltage
Meter
0.01µF
(Note 1)
Supply
Voltage
(V
DD
)
Tri-State
0.1µF
(Note 1)
Voltage
Control
Probe
(Note 2)
Output
Ground
C
L
(Note 3)
Power
Supply
Voltage
Meter
Note 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a
0.01µF high frequency ceramic bypass capacitor close to the package ground
and V
DD
pin is required.
Note 2: A low capacitance (<12pF), 10X attenuation factor, high impedance
(>10Mohms), and high bandwidth (>300MHz) passive probe is recommended.
Note 3: Capacitance value C
L
includes sum of all probe and fixture capacitance.
www.ecliptek.com | Specification Subject to Change Without Notice | Rev C 3/11/2011 | Page 3 of 6
EB52E8C4V-8.000M TR
Recommended Solder Reflow Methods
T
P
Critical Zone
T
L
to T
P
Ramp-up
Ramp-down
Temperature (T)
T
L
T
S
Max
T
S
Min
t
S
Preheat
t 25°C to Peak
t
L
t
P
Time (t)
High Temperature Infrared/Convection
T
S
MAX to T
L
(Ramp-up Rate)
Preheat
- Temperature Minimum (T
S
MIN)
- Temperature Typical (T
S
TYP)
- Temperature Maximum (T
S
MAX)
- Time (t
S
MIN)
Ramp-up Rate (T
L
to T
P
)
Time Maintained Above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Target Peak Temperature (T
P
Target)
Time within 5°C of actual peak (t
p
)
Ramp-down Rate
Time 25°C to Peak Temperature (t)
Moisture Sensitivity Level
3°C/second Maximum
150°C
175°C
200°C
60 - 180 Seconds
3°C/second Maximum
217°C
60 - 150 Seconds
260°C Maximum for 10 Seconds Maximum
250°C +0/-5°C
20 - 40 seconds
6°C/second Maximum
8 minutes Maximum
Level 1
www.ecliptek.com | Specification Subject to Change Without Notice | Rev C 3/11/2011 | Page 5 of 6
Microcontroller MCU
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