EEWORLDEEWORLDEEWORLD

Part Number

Search

IRHM53160UPBF

Description
Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size124KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
Download Datasheet Parametric View All

IRHM53160UPBF Overview

Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN

IRHM53160UPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-254AA
package instructionFLANGE MOUNT, R-MSFM-P3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)35 A
Maximum drain-source on-resistance0.018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)140 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 93784E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level
IRHM57160
100K Rads (Si)
IRHM53160
300K Rads (Si)
IRHM54160
IRHM58160
600K Rads (Si)
1000K Rads (Si)
R
DS(on)
0.018Ω
0.018Ω
0.018Ω
0.019Ω
I
D
35A*
35A*
35A*
35A*
IRHM57160
100V, N-CHANNEL
4
#

TECHNOLOGY
c
TO-254AA
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermatically Sealed
Electically Isolated
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by internal wire diameter
For footnotes refer to the last page
35*
35*
140
250
2.0
±20
500
35
25
3.4
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
www.irf.com
1
08/22/01
EEWORLD University Hall----Detailed explanation of TI's new generation of wide input buck chips
TI? New generation wide input buck chip detailed explanation : https://training.eeworld.com.cn/course/4801This course will introduce the concept of wide-input buck chips, application scenarios, and an...
hi5 Talking
Capacitive touch MSP430FR2676 MCU motherboard
The MSP430FR2676 CapTIvate Touch MCU Board (CAPTIVATE-FR2676) is a simple evaluation board for evaluating capacitive touch and proximity sensors using plug-in sensor boards (sold separately).The MCU b...
Jacktang Microcontroller MCU
Automotive resolver decoding application design guide
Author: Maksim Liu In the "New Energy Vehicle Industry Development Plan (2021-2035)" (Draft for Comments) issued by the Ministry of Industry and Information Technology, it is proposed that by 2025, th...
alan000345 TI Technology Forum
【XMC4800 Relax EtherCAT Kit Review 2】-Building the environment and lighting up the LED
[i=s]This post was last edited by tdatd on 2019-1-2 11:13[/i] [align=left][align=left]Go to the evaluation application interface[size=7.5pt] [/size][url=https://en.eeworld.com/bbs/elecplay/content/100...
tdatd Industrial Control Electronics
【GD32L233C-START Review】-Serial port to USB to implement printf printing
Hardware InterfaceFrom the hardware configuration point of view, USART0 is used .Software InterfaceSerial port initializationSerial port printf redirectionAdd Print InformationConnect USB portInstall ...
anger0925 GD32 MCU
Common problems in OLED development
1.Installation There are usually three ways to install OLED:1). Because it is relatively thin, it can usually be glued to the PCB with double-sided tape or foam tape.2). If you have higher requirement...
罗姆液晶技术站 Integrated technical exchanges

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号