K4S64163LH-BL1L datasheet, PDF

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K4S64163LH-BL1L: DescriptionSynchronous DRAM, 4MX16, 7ns, CMOS, PBGA54; Categorystorage storage; File Size113KB，12 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4S64163LH-BL1L Overview

Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54

K4S64163LH-BL1L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
Reach Compliance Code	compliant
Maximum access time	7 ns
Maximum clock frequency (fCLK)	105 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	S-PBGA-B54
memory density	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of terminals	54
word count	4194304 words
character code	4000000
Maximum operating temperature	70 °C
Minimum operating temperature	-25 °C
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA54,9X9,32
Package shape	SQUARE
Package form	GRID ARRAY, FINE PITCH
power supply	1.8/2.5,2.5 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.0005 A
Maximum slew rate	0.1 mA
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

K4S64163LH-BL1L Related Products

	K4S64163LH-BL1L	K4S64163LH-BC1L	K4S64163LH-BN75	K4S64163LH-BG75	K4S64163LH-BG1H
Description	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
Maximum access time	7 ns	7 ns	5.4 ns	5.4 ns	7 ns
Maximum clock frequency (fCLK)	105 MHz	105 MHz	133 MHz	133 MHz	105 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	S-PBGA-B54	S-PBGA-B54	S-PBGA-B54	S-PBGA-B54	S-PBGA-B54
memory density	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	16	16	16	16	16
Number of terminals	54	54	54	54	54
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000	4000000	4000000
Maximum operating temperature	70 °C	70 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C
organize	4MX16	4MX16	4MX16	4MX16	4MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	FBGA	FBGA	FBGA	FBGA	FBGA
Encapsulate equivalent code	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH
power supply	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.0005 A	0.0005 A	0.0005 A	0.0005 A	0.0005 A
Maximum slew rate	0.1 mA	0.1 mA	0.115 mA	0.115 mA	0.11 mA
surface mount	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER	OTHER
Terminal form	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM

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