K4H511638C-ULCC0 datasheet, PDF

K4H511638C-ULCC0: DescriptionDDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66; Categorystorage storage; File Size370KB，24 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4H511638C-ULCC0 Overview

DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSSOP, TSSOP66,.46
Contacts	66
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.65 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PDSO-G66
JESD-609 code	e6
length	22.22 mm
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	66
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP66,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)	260
power supply	2.6 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	2,4,8
Maximum standby current	0.005 A
Maximum slew rate	0.4 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.5 V
Nominal supply voltage (Vsup)	2.6 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Bismuth (Sn/Bi)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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