Variable Capacitance Diode, 180pF C(T), Silicon, Abrupt, DO-7, GLASS PACKAGE-2
Parameter Name | Attribute value |
Maker | Cobham PLC |
package instruction | O-LALF-W2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode Capacitance Tolerance | 10% |
Nominal diode capacitance | 180 pF |
Diode component materials | SILICON |
Diode type | VARIABLE CAPACITANCE DIODE |
JEDEC-95 code | DO-7 |
JESD-30 code | O-LALF-W2 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 2 |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Maximum power dissipation | 0.475 W |
Certification status | Not Qualified |
minimum quality factor | 200 |
Maximum repetitive peak reverse voltage | 20 V |
surface mount | NO |
Terminal surface | TIN LEAD |
Terminal form | WIRE |
Terminal location | AXIAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Varactor Diode Classification | ABRUPT |
MV1656 | MV1654 | MV1666 | MV1662 | MV1664 | |
---|---|---|---|---|---|
Description | Variable Capacitance Diode, 180pF C(T), Silicon, Abrupt, DO-7, GLASS PACKAGE-2 | Variable Capacitance Diode, 150pF C(T), Silicon, Abrupt, DO-7, GLASS PACKAGE-2 | Variable Capacitance Diode, 330pF C(T), Silicon, Abrupt, DO-7, GLASS PACKAGE-2 | Variable Capacitance Diode, 250pF C(T), Silicon, Abrupt, DO-7, GLASS PACKAGE-2 | Variable Capacitance Diode, 270pF C(T), Silicon, Abrupt, DO-7, GLASS PACKAGE-2 |
Maker | Cobham PLC | Cobham PLC | Cobham PLC | Cobham PLC | Cobham PLC |
package instruction | O-LALF-W2 | O-LALF-W2 | GLASS PACKAGE-2 | GLASS PACKAGE-2 | GLASS PACKAGE-2 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Diode Capacitance Tolerance | 10% | 11.11% | 10% | 10% | 10.5% |
Nominal diode capacitance | 180 pF | 150 pF | 330 pF | 250 pF | 270 pF |
Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
JEDEC-95 code | DO-7 | DO-7 | DO-7 | DO-7 | DO-7 |
JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 |
Number of components | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 | 2 |
Package body material | GLASS | GLASS | GLASS | GLASS | GLASS |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Maximum power dissipation | 0.475 W | 0.475 W | 0.475 W | 0.475 W | 0.475 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
minimum quality factor | 200 | 250 | 100 | 150 | 100 |
Maximum repetitive peak reverse voltage | 20 V | 20 V | 15 V | 15 V | 15 V |
surface mount | NO | NO | NO | NO | NO |
Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE |
Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Varactor Diode Classification | ABRUPT | ABRUPT | ABRUPT | ABRUPT | ABRUPT |