ML720J11S-02 datasheet, PDF - EEWORLD Datasheet

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ML720J11S-02: DescriptionLaser Diode, 1310nm; CategoryLED optoelectronic/LED photoelectric; File Size176KB，2 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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ML720J11S-02 Overview

Laser Diode, 1310nm

ML720J11S-02 Parametric

Parameter Name	Attribute value
Maker	Mitsubishi
Reach Compliance Code	unknown
Configuration	SINGLE WITH BUILT-IN PHOTO DIODE
Maximum forward current	0.04 A
Maximum forward voltage	1.8 V
Installation features	THROUGH HOLE MOUNT
Number of functions	1
Maximum operating temperature	85 °C
Minimum operating temperature	-20 °C
Optoelectronic device types	LASER DIODE
Nominal output power	6 mW
peak wavelength	1310 nm
Maximum response time	4e-10 s
Semiconductor material	InGaAsP
shape	ROUND
size	2 mm
surface mount	NO
Maximum threshold current	30 mA

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MITSUBISHI LASER DIODES

ML7XX11 SERIES

InGaAsP DFB-LASER DIODES

TYPE

NAME

ML725B11/ML720J11S/ML725J11F

APPLICATION

Long - distance digital transmission system

DESCRIPTION

ML7XX11 series are DFB (Distributed Feedback) laser diodes

emitting light beam around 1310nm.

They are well suited for light source in long -distance

digital transmission systems.

ML725B11F / ML720J11S are hermetically sealed devices with

the photo diode for optical output monitoring.

***Specification

Note

Type

ML7XX11-01

ML7XX11-02

ML7XX11-03

Operation Temperature Range

Tc=-40 to 85ºC

Tc=-20 to 85ºC

Tc= 0 to 85ºC

FEATURES

Low threshold current (typical 10mA)

Wide temperature range operation

High - side mode suppression ratio (typical 40dB)

High speed response (typical 0.2nsec)

MQW* active layer

FSBH** structure fabricated by MOCVD process

* Multiple Quantum Well

** Facet Selective - growth Buried Hetero structure

ABSOLUTE MAXIMUM RATINGS

Symbol

Po

VRL

VRD

IFD

Tc

Tstg

Parameter

Light output power

Reverse voltage (Laser diode)

Reverse voltage (Photo diode)

Forward current (Photo diode)

Case temperature

Conditions

CW

-

-01

-02

-03

Ratings

6

2

20

2

-40 to +85

-20 to +85

0 to +85

- 40 to +100

Unit

mW

V

mA

ºC

Storage temperature

ºC

ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC

Symbol

Ith

Iop

Vop

p

Parameter

Threshold current

Operation current

Operating voltage

Slope efficiency

Peak wavelength

Beam divergence angle (parallel)

Beam divergence angle

(perpendicular)

SMSR

I

m

tr,tf

Side mode suppression ratio

Monitoring output current

Rise and Fall time

CW

CW,Po=5mW

CW,Po=5mW ***)Note

CW,Po=5mW

CW,Po=5mW ***)Note

CW,Po=5mW

If=Ith,Po=5mW,10 - 90%

Test conditions

Min.

-

0.3

1290

-

30

-

Typ.

10

20

1.2

0.5

1310

25

30

40

0.2

Max

30

40

1.8

-

1330

35

40

-

0.4

Unit

mA

V

mW/mA

nm

deg.

dB

mA

ns

MITSUBISHI

ELECTRIC

ML720J11S-02 Related Products

	ML720J11S-02	ML720J11S-01	ML725J11F-03	ML725J11F-02	ML725J11F-01	ML720J11S-03
Description	Laser Diode, 1310nm	Laser Diode, 1310nm	Laser Diode, 1310nm	Laser Diode, 1310nm	Laser Diode, 1310nm	Laser Diode, 1310nm
Maker	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknow
Maximum forward current	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A
Maximum forward voltage	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
Installation features	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-20 °C	-40 °C	-	-20 °C	-40 °C	-
Optoelectronic device types	LASER DIODE	LASER DIODE	LASER DIODE	LASER DIODE	LASER DIODE	LASER DIODE
peak wavelength	1310 nm	1310 nm	1310 nm	1310 nm	1310 nm	1310 nm
Maximum response time	4e-10 s	4e-10 s	4e-10 s	4e-10 s	4e-10 s	4e-10 s
Semiconductor material	InGaAsP	InGaAsP	InGaAsP	InGaAsP	InGaAsP	InGaAsP
surface mount	NO	NO	NO	NO	NO	NO

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